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KMA200 Datasheet(PDF) 16 Page - NXP Semiconductors |
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KMA200 Datasheet(HTML) 16 Page - NXP Semiconductors |
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16 / 33 page ![]() KMA200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 8 — 7 December 2011 16 of 33 NXP Semiconductors KMA200 Programmable angle sensor [1] Diagnosis GND and VDD lost only possible with a pull-up resistor of 5 k to 6 k. [2] Diagnosis VDD lost only possible with a pull-down resistor of 5 k to 6 k. [3] Load resistor required to enable the diagnosis features. Infinite resistor load permitted for normal operation without the diagnosis features. [4] Analog outputs need to be low-pass filtered (corner frequency about 1.3 kHz). [5] See Figure 9. On-chip temperature sensor characteristics Tsen sensor temperature chip temperature 50 - +180 C Tsen(res) sensor temperature resolution chip temperature - 2 - C/LSB T sen sensor temperature accuracy chip temperature 5- +5 C Twarn(res) warning temperature resolution setting by EEPROM address 6 - 2 - C Tshut(res) shut-down temperature resolution setting by EEPROM address 6 - 2 - C SPI characteristics VIL LOW-level input voltage for VX =CLK, CS, DATA 0 - 25 %VDD VIH HIGH-level input voltage for VX =CLK, CS, DATA 75 - 100 %VDD VOL LOW-level output voltage Isink <2 mA 0 - 15 %VDD VOH HIGH-level output voltage Isource <2mA 85 - 100 %VDD IOM peak output current current limitation of the device - - 20 mA tr(o) output rise time normal operation mode from 10 %VDD to 90 %VDD, CL = 100 pF (SL bit = 0) 100 - 400 ns (SL bit = 1) 500 - 1300 ns tf(o) output fall time (SL bit = 0) 100 - 400 ns (SL bit = 1) 500 - 1300 ns fclk clock frequency for VX = CLK 1 - 1000 kHz Dynamics tpu power-up time until first valid result - - 10 ms fupd(meas) measurement update rate at oscillator frequency 3 4 5 kHz ts settling time after ideal input angle step until analog standard output reaches 90 % of final value, at nominal oscillator frequency, CL =5nF -1 1.8 ms Table 7. Characteristics …continued In homogenous magnetic field at saturation field strength of minimum 35 kA/m and external capacitance Cext between VDD and GND. Tamb = 40 C to +160 C; VDD = 4.5 V to 5.5 V. Symbol Parameter Conditions Min Typ Max Unit |
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