SERIES 2 FLASH MEMORY CARDS

Symbol

Parameter

Notes

Min

Max

Unit

JEDEC

PCMCIA

Write Cycle Time

150

ns

Write Pulse Width

80

ns

Address Setup Time

20

ns

Address Setup Time for WE

100

ns

Going High

100

ns

Card Enable Setup Time for WE

100

ns

Data Setup Time for WE

50

ns

Data Hold Time

20

ns

Write Recover Time

20

ns

WE

High to RDYBSY

120

ns

Duration of Data Write Operation

6

m

s

Duration of Block Erase Operation

03

sec

2

0

ns

Write Recovery before Read

10

ns

Reset-PwrDwn Recovery to WE

Going Low

1

m

s

NOTES

1 Read timing characteristics during erase and data write operations are the same as during read-only operations Refer to

AC Characteristics for Read-Only operations

2 Refer to text on Data-Write and Block-Erase Operations

BLOCK ERASE AND DATA WRITE PERFORMANCE

Parameter

Notes

Min

2 4

11

10

sec

Block Pair Write Time

2 4

05

21

sec

ByteWord Write Time

4

48 ms6 ms3 ms

NOTES

1 Individual blocks can be erased 100000 times

2 Excludes System-Level Overhead

4 Monitor ReadyBusy Registers for the completion of a writeerase command

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