TPS53317

SLUSAK4D – JUNE 2011 – REVISED JULY 2015

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6.4 Thermal Information

TPS53317

RGB (VQFN)

UNIT

20 PINS

Junction-to-ambient thermal resistance

35.5

°C/W

Junction-to-case (top) thermal resistance

39.6

°C/W

Junction-to-board thermal resistance

12.4

°C/W

Junction-to-top characterization parameter

0.5

°C/W

Junction-to-board characterization parameter

12.5

°C/W

Junction-to-case (bottom) thermal resistance

3.7

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY: VOLTAGE, CURRENTS AND 5 V UVLO

VIN shutdown current

EN = 'LO'

0.02

5

µA

V5IN supply voltage

V5IN voltage range

4.5

5.0

6.5

V

V5IN supply current

1.1

2

mA

= 600 kHz

V5IN shutdown current

EN = ‘LO’, V5IN shutdown current

0.2

7.0

µA

V5IN UVLO

Ramp up; EN = 'HI'

4.20

4.37

4.50

V

V5IN UVLO hysteresis

Falling hysteresis

440

mV

Rising edge of VREF, EN = 'HI'

1.8

V

100

mV

OVP latch is reset by V5IN falling

Reset

1.5

2.3

3.1

V

below the reset threshold

VOLTAGE FEEDBACK LOOP: VREF, VOUT, AND VOLTAGE GM AMPLIFIER

–1%

0%

1%

Output voltage accuracy

–1%

0%

1%

1.98

2.00

2.02

VREF

V

1.975

2.000

2.025

VREF sink current

2.5

mA

Transconductance

1.00

mS

0

2

V

Differential mode input voltage

0

80

mV

COMP pin maximum sinking current

80

µA

mV

COMP pin maximum sourcing current

-80

µA

Input offset voltage

0

mV

Output voltage discharge resistance

42

Ω

4.5

6.0

7.5

MHz

CURRENT SENSE: CURRENT SENSE AMPLIFIER, OVERCURRENT AND ZERO CROSSING

Gain from the current of the low-

Internal current sense gain

side FET to PWM comparator

43

53

57

mV/A

when PWM = "OFF"

Positive overcurrent limit (valley)

7.6

A

Negative overcurrent limit (valley)

–9.3

A

Zero crossing comp internal offset

0

mV

(1)

Ensured by design, not production tested.

6

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