GC5016 datasheet(3/88 Pages) TI

3 / 88 page

GC5016

SLWS142G − JANUARY 2003 − REVISED NOVEMBER 2005

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

4 ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted(1)

GC5016

Pad ring supply voltage, VPAD

−0.3 V to 4 V

Core supply voltage, VCORE

−0.3 V to 2.3 V

Input voltage (undershoot and overshoot), VIN

−0.5 V to VPAD+0.5 V

Storage temperature, Tstg

−65

°C to 150°C

Junction temperature, TJ

105

°C

Lead soldering temperature (10 seconds)

300

°C

Human body model

2 kV

ESD classification

Machine body model

200 V

ESD classification

Charged device model

500 V

Moisture sensitivity

Level 3

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5 RECOMMENDED OPERATING CONDITIONS

MIN

MAX

UNITS

Pad ring supply voltage, VPAD

3.6

Core supply voltage, VCORE

1.6

Temperature ambient, no air flow, TA(1)

−40

Junction temperature, TJ(2)

105

(1) Chips specifications in the AC CHARACTERISTICS and DC CHARACTERISTICS tables are production tested at 100_C case temperature. QA

tests are performed at 85

°C case temperature.

(2) Thermal management may be required for full rate operation (see the THERMAL CHARACTERISTICS table). The circuit is designed for junction

temperatures up to 125

°C. Sustained operation at elevated temperatures reduces long-term reliability. Lifetime calculations based on maximum

junction temperature of 105

°C.

6 DC CHARACTERISTICS

−40

°C to 85°C case temperature unless otherwise noted

PARAMETER

VPAD = 3 V to 3.6 V

UNIT

PARAMETER

MIN

TYP

MAX

UNIT

VIL

Voltage input low (1)

0.8

VIH

Voltage input high (1)

VOL

Voltage output low (IOL = 2 mA) (1)

0.5

VOH

Voltage output high (IOH = −2 mA) (1)

2.4

| IIN |

Leakage current (VIN = 0 V or VPAD), inputs or outputs in high-impedance state condition (1)

µA

| IPU |

Pullup current (VIN = 0 V) ( TDI, TMS, TCK) (1)

µA

ICCQ

Quiescent supply current, ICORE or IPAD(VIN=0 or VPAD, RST = TRST = 0) (1)

CIN

Data input capacitance (all inputs except CK) (2)

CCK

Clock input capacitance (CK input) (2)

(1) Each part is tested with a 100°C case temperature for the given specification.

(2) Controlled by design and process and not directly tested.

NOTE: General: Voltages are measured at low speed. Output voltages are measured with the indicated current load.

General: Currents are measured at nominal voltages, high temperature (100

_C for production test, 85_C for QA).

GC5016 Datasheet(PDF) 3 Page - Texas Instruments

GC5016 Datasheet(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88

Datasheet Download

Link URL