HAL815 datasheet(17/24 Pages) MICRONAS

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ADVANCE INFORMATION

HAL 815

Micronas

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor each between ground and

the supply voltage, respectively the output voltage pin.

In addition, the input of the controller unit should be

pulled-down with a 4.7 kOhm resistor and a ceramic

4.7 nF capacitor.

Please note that during programming, the sensor will

be supplied repeatedly with the programming voltage

of 12 V for 100 ms. All components connected to the

VDD line at this time must be able to resist this voltage.

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL 815 in Parallel

Two different HAL 815 sensors which are operated in

parallel to the same supply and ground line can be pro-

grammed individually. In order to select the IC which

should be programmed, both Hall ICs are inactivated

by the “Deactivate” command on the common supply

line. Then, the appropriate IC is activated by an “Acti-

vate” pulse on its output. Only the activated sensor will

react to all following read, write, and program com-

mands. If the second IC has to be programmed, the

“Deactivate” command is sent again, and the second

IC can be selected.

Fig. 4–2: Parallel operation of two HAL 815

4.3. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for linear compensation is given in the following

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are required which are not shown in the table.

Please contact Micronas for more detailed information

on this higher order temperature compensation.

The HAL 800 and HAL 815 contain the same tempera-

ture compensation circuits. If an optimal setting for the

HAL 800 is already available, the same settings may

be used for the HAL 815.

OUT

VDD

GND

4.7 nF

HAL815

4.7 k

Ω

µC

4.7 nF

HAL 815

GND

10 nF

HAL 815

4.7 nF

Sensor A

Sensor B

VDD

OUT B & Select B

OUT A & Select A

Temperature

Coefficient of

Magnet (ppm/K)

TCSQ

400

300

200

100

018

−50

−90

−130

−170

−200

−240

−280

−320

−360

−410

−450

−500

−550

−600

−650

−700

−750

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