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NSC800N Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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NSC800N Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 76 page ![]() 40 AC Electrical Characteristics VCC e 5V g10% GND e 0V unless otherwise specified (Continued) Symbol Parameter NSC800-1 NSC800-3 NSC800-35 NSC800-4 Units Notes Min Max Min Max Min Max Min Max TH(ADH)1 A(8–15) Hold Time During 0 0 0 0 ns Opcode Fetch TH(ADH)2 A(8–15) Hold Time During 400 100 85 60 ns Memory or IO RD and WR TH(ADL) AD(0 – 7) Hold Time 100 60 35 30 ns TH(WD) Write Data Hold Time 400 100 85 75 ns tINH Interrupt Hold Time 0 0 0 0 ns tINS Interrupt Set-Up Time 100 50 50 45 ns tNMI Width of NMI Input 50 30 25 20 ns tRDH Data Hold after Read 0 0 0 0 ns tRFLF RFSH Rising to ALE 60 50 45 40 ns Falling tRL(MR) RD Rising to ALE Rising 390 100 50 45 ns (Memory Read) tS(AD) AD(0 – 7) Set-Up Time 300 45 45 40 ns tS(ALE) A(8 – 15) SO SI IOM 350 70 55 50 ns Set-Up Time tS(WD) Write Data Set-Up Time 385 75 35 30 ns tW(ALE) ALE Width 430 130 115 100 ns tWH WAIT Hold Time 0 0 0 0 ns tW(I) Width of INTR RSTA-C 500 200 140 125 ns PS BREQ tW(INTA) INTA Strobe Width 1000 400 225 200 ns Add two t states for first INTA of each interrupt response string Add t for each WAIT state tWL WR Rising to ALE Rising 450 130 70 70 ns tW(RD) Read Strobe Width During 960 360 210 185 ns Add t for each WAIT State Add t2 for Memory Opcode Fetch Read Cycles tW(RFSH) Refresh Strobe Width 1925 725 450 395 ns tWS WAIT Set-Up Time 100 70 60 55 ns tW(WAIT) WAIT Input Width 550 250 195 175 ns tW(WR) Write Strobe Width 985 370 250 220 ns Add t for each WAIT state tXCF XIN to Clock Falling 25 100 15 95 5 90 5 80 ns tXCR XIN to Clock Rising 25 85 15 85 5 90 5 80 ns Note 1 Test conditions t e 1000 ns for NSC800-1 400 ns for NSC800 285 ns for NSC800-35 250 ns for NSC800-4 Note 2 Output timings are measured with a purely capacitive load of 100 pF 5 |
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