SLG46170 datasheet(6/87 Pages) DIALOG

6 / 87 page

000-0046170-103

Page 5 of 86

SLG46170

5.0 Electrical Specifications

5.1 Absolute Maximum Conditions

5.2 Electrical Characteristics (1.8 V ±5% VDD)

Parameter

Min.

Max.

Unit

Supply voltage on VDD relative to GND

-0.5

DC Input voltage

GND - 0.5

VDD + 0.5

Maximum Average or

DC Current

(Through pin)

Push-Pull 1x

Push-Pull 2x

OD 1x

OD 2x

OD 4x

Current at Input Pin

-1.0

1.0

Storage Temperature Range

-65

150

°C

Junction Temperature

150

°C

ESD Protection (Human Body Model)

2000

ESD Protection (Charged Device Model)

1300

Moisture Sensitivity Level

Symbol

Parameter

Condition/Note

Min.

Typ.

Max.

Unit

VDD

Supply Voltage

1.71

1.80

1.89

Operating Temperature

-40

°C

VPP

Programming Voltage

7.25

7.50

7.75

VIH

HIGH-Level Input Voltage

Logic Input

1.100

Logic Input with Schmitt Trigger

1.270

Low-Level Logic Input

0.980

VIL

LOW-Level Input Voltage

Logic Input

0.690

Logic Input with Schmitt Trigger

0.440

Low-Level Logic Input

0.520

ILKG

Input Leakage

(Absolute Value)

1000

VOH

HIGH-Level Output Voltage

Push-Pull 1X, Open Drain PMOS 1X,

IOH = 100 A

1.690

1.789

Push-Pull 2X, Open Drain PMOS 2X,

IOH = 100 A

1.700

1.794

VOL

LOW-Level Output Voltage

Push-Pull 1X,

IOL= 100 A

0.008

0.030

Push-Pull 2X,

IOL= 100 A

0.004

0.010

Open Drain NMOS 1X,

IOL= 100 A

0.005

0.020

Open Drain NMOS 2X,

IOL= 100 A

0.003

0.010

Open Drain NMOS 4X,

IOL= 100 A

0.003

0.004

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