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S71PL254 Datasheet(PDF) 28 Page - SPANSION |
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S71PL254 Datasheet(HTML) 28 Page - SPANSION |
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28 / 196 page ![]() 28 S29PL127J/S29PL064J/S29PL032J for MCP S29PL127J_064J_032J_MCP_00_A3 August 12, 2004 Advance I n f o rmation and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or ac- cept another command. The sector erase architecture allows memory sectors to be erased and repro- grammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automat- ically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combina- tion of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the Secured Silicon Sector area (One Time Program area) after an erase suspend, then the user must use the proper command sequence to enter and exit this region. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. The device electrically erases all bits within a sector simultaneously via Fowler- Nordheim tunneling. The data is programmed using hot electron injection. |
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