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S71PL254 Datasheet(PDF) 34 Page - SPANSION |
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S71PL254 Datasheet(HTML) 34 Page - SPANSION |
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34 / 196 page ![]() 34 S29PL127J/S29PL064J/S29PL032J for MCP S29PL127J_064J_032J_MCP_00_A3 August 12, 2004 Advance I n f o rmation access time is the delay from the falling edge of the OE# to valid data at the out- put inputs (assuming the addresses have been stable for at least tACC–tOE time). Page Mode Read The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. Address bits Amax–A3 select an 8 word page, and address bits A2–A0 select a specific word within that page. This is an asyn- chronous operation with the microprocessor supplying the specific word location. The random or initial page access is tACC or tCE and subsequent page read ac- cesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. Fast page mode accesses are obtained by keeping Amax–A3 constant and changing A2–A0 to select the specific word within that page. Simultaneous Read/Write Operation In addition to the conventional features (read, program, erase-suspend read, and erase-suspend program), the device is capable of reading data from one bank of memory while a program or erase operation is in progress in another bank of memory (simultaneous operation). The bank can be selected by bank addresses (PL127J: A22–A20, L064J: A21–A19, PL032J: A20–A18) with zero latency. The simultaneous operation can execute multi-function mode in the same bank. Table 2. Page Select Word A2 A1 A0 Word 0 0 0 0 Word 1 0 0 1 Word 2 0 1 0 Word 3 0 1 1 Word 4 1 0 0 Word 5 1 0 1 Word 6 1 1 0 Word 7 1 1 1 Table 3. Bank Select Bank PL127J: A22–A20 PL064J: A21–A19 PL032J: A20–A18 Bank A 000 Bank B 001, 010, 011 Bank C 100, 101, 110 Bank D 111 |
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