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RFPIC12C509AF Datasheet(PDF) 79 Page - Microchip Technology |
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RFPIC12C509AF Datasheet(HTML) 79 Page - Microchip Technology |
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79 / 104 page  © 2001 Microchip Technology Inc. Preliminary DS70031A-page 77 rfPIC12C509AG/509AF 11.1 DC CHARACTERISTICS: rfPIC12C509AG/509AF (Industrial) DC Characteristics Standard Operating Conditions (unless otherwise specified) Operating Temperature –40 °C ≤ TA ≤ +85°C (industrial) Param No. Sym Characteristic Min Typ(1) Max Units Conditions D001 VDD Supply Voltage 2.5 5.5 V See Figures 11-1 through 11-2 D002 VDR RAM Data Retention Voltage(2) 1.5* V Device in SLEEP mode D003 VPOR VDD Start Voltage to ensure Power-on Reset VSS V See section on Power-on Reset for details D004 SVDD VDD Rise Rate to ensure Power-on Reset 0.05 * V/ms See section on Power-on Reset for details D010 D010C D010A IDD Supply Current(3) - - - 0.4 0.4 115 0.8 0.8 31 mA mA µA XT and EXTRC options (Note 4) FOSC =4 MHz, VDD =2.5V INTRC Option FOSC =4 MHz, VDD =2.5V LP Option, Industrial Temperature FOSC =32 kHz, VDD =2.5V, WDTdisabled D020 D021 D021B IPD Power-Down Current (5) -0.2 4 µAVDD =2.5V, Industrial ∆IWDT -2.0 5 µAVDD =2.5V, Industrial 1A Fosc LP Oscillator Operating Frequency XT Oscillator Operating Frequency 0 0 - - 200 4 kHz MHz All temperatures All temperatures * These parameters are characterized but not tested. Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25 °C. This data is for design guid- ance only and is not tested. 2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the current consumption. a) The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified. b) For standby current measurements, the conditions are the same, except that the device is in SLEEP mode. 4: Does not include current through REXT. The current through the resistor can be estimated by the formula: IR =VDD/2REXT (mA) with REXT in kOhm. 5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS. |
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