BQ25302 datasheet(7/38 Pages) TI

7 / 38 page

7.3 Recommended Operating Conditions (continued)

over operating free-air temperature range (unless otherwise noted)

PARAMETER

MIN

NOM

MAX

UNIT

CPMID

Effective PMID capacitance

µF

CBAT

Effective BAT capacitance

µF

7.4 Thermal Information

THERMAL METRIC

DEVICE

UNIT

RθJA

Junction-to-ambient thermal resistance (JEDEC(1))

45.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

48.5

°C/W

RθJB

Junction-to-board thermal resistance

19.0

°C/W

ΨJT

Junction-to-top characterization parameter

1.3

°C/W

ΨJB

Junction-to-board characterization parameter

19.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

7.9

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

VVBUS_UVLOZ < VVBUS < VVBUS_OVP and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C, and TJ = 25°C for typical values

(unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

QUIESCENT CURRENT

IVBUS_REVS

VBUS reverse current from BAT/SW

to VBUS, TJ = -40°C - 85°C

VBAT = VSW = 4.5V, VBUS is shorted to GND,

measure VBUS reverse current

0.07

µA

IQ_VBUS_DIS

VBUS leakage current in disable

mode, TJ = -40°C - 85°C

VBUS = 5V, VBAT = 4V, charger is

disabled, /EN is pulled high

4.1

µA

IQ_BAT_DIS

Leakage current from battery in

disable mode, TJ = -40°C - 65°C

VBUS = 5V, VBAT = 4V, charger is disabled,

POL is grounded /EN is floating

1.0

µA

IQ_BAT_HIZ

BAT and SW pin leakage current in

HiZ mode, TJ = -40°C - 65°C

VBAT = VSW = 4.5V, VBUS floating

0.17

1.0

µA

VBUS POWER UP

VVBUS_OP

VBUS operating range

4.1

6.2

VVBUS_UVLOZ

VBUS power on reset

VBUS rising

3.0

3.80

VVBUS_UVLOZ_HYS

VBUS power on reset hysteresis

VBUS falling

250

VVBUS_LOWV

A condition to turnon REGN

VBUS rising, REGN turns on, VBAT = 3.2V

3.8

3.90

4.00

VVBUS_LOWV_HYS

A condition to turnon REGN,

hysteresis

VBUS falling, REGN turns off, VBAT = 3.2V

300

VSLEEP

Enter sleep mode threshold

VBUS falling, VBUS - VBAT, VVBUS_LOWV < V

BAT < VBATREG

100

VSLEEPZ

Exit sleep mode threshold

VBUS rising, VBUS - VBAT, VVBUS_LOWV < V

BAT < VBATREG

110

157

250

VVBUS_OVP_RISE

VBUS overvoltage rising threshold

VBUS rising, converter stops switching

6.20

6.40

6.60

VVBUS_OVP_HYS

VBUS overvoltage falling hysteresis

VBUS falling, converter stops switching

500

MOSFETS

RDSON_Q1

Top reverse blocking MOSFET on-

resistance between VBUS and

PMID (Q1)

VREGN = 5V

mΩ

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BQ25302

SLUSCZ3 – OCTOBER 2020

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