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EMC1702 Datasheet(PDF) 30 Page - Microchip Technology |
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EMC1702 Datasheet(HTML) 30 Page - Microchip Technology |
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30 / 60 page ![]() EMC1702 DS20006455A 30 2020 Microchip Technology Inc. Chapter 5 Register Description The registers shown in Table 5.1 are accessible through the SMBus. An entry of ‘-’ indicates that the bit is not used and will always read ‘0’. Table 5.1 Register Set in Hexadecimal Order REGISTER ADDRESS R/W REGISTER NAME FUNCTION DEFAULT VALUE PAGE 00h R Internal Diode Data High Byte Stores the integer data for the Internal Diode (mirrored at address 38h) 00h Page 33 01h R External Diode 1 Data High Byte Stores the integer data for External Diode 1 (mirrored at address 3Ah) 00h Page 33 02h R Status Stores the status bits for the Internal Diode and External Diode (mirrored at address 34h) 00h Page 34 03h R/W Configuration Controls the general operation of the device (mirrored at address 09h) 00h Page 35 04h R/W Conversion Rate Controls the conversion rate for updating measurement data (mirrored at address 0Ah) 06h (4/sec) Page 36 05h R/W Internal Diode High Limit Stores the 8-bit high limit for the Internal Diode (mirrored at address 0Bh) 55h (85°C) Page 37 06h R/W Internal Diode Low Limit Stores the 8-bit low limit for the Internal Diode (mirrored at address 0Ch) 80h (-128°C) Page 37 07h R/W External Diode 1 High Limit High Byte Stores the integer portion of the high limit for External Diode 1 (mirrored at register 0Dh) 55h (85°C) Page 37 08h R/W External Diode 1 Low Limit High Byte Stores the integer portion of the low limit for External Diode 1 (mirrored at register 0Eh) 80h (-128°C) Page 37 09h R/W Configuration Controls the general operation of the device (mirrored at address 03h) 00h Page 35 0Ah R/W Conversion Rate Controls the conversion rate for updating measurement data (mirrored at address 04h) 06h (4/sec) Page 36 0Bh R/W Internal Diode High Limit Stores the 8-bit high limit for the Internal Diode (mirrored at address 05h) 55h (85°C) Page 37 0Ch R/W Internal Diode Low Limit Stores the 8-bit low limit for the Internal Diode (mirrored at address 06h) 80h (-128°C) Page 37 |
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