CD1020 datasheet(7/56 Pages) NXP

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NXP Semiconductors

CD1020

General product characteristics

4.1

Maximum ratings

Table 3. Maximum ratings

All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage

to the device.

Symbol

Description (rating)

Min

Max

Unit

Notes

Electrical ratings

VBATP

Battery voltage

–0.3

VDDQ

Supply voltage

–0.3

7.0

CS_B, MOSI,

MISO, SCLK

SPI inputs/outputs

–0.3

7.0

SGx, SPx

Switch input range

–14(2)

AMUX

–0.3

7.0

INT_B

–0.3

7.0

WAKE_B

–0.3

VESD1-2

VESD1-3

VESD3-1

VESD2-1

VESD2-2

ESD voltage

• Human Body Model (HBM) (VBATP versus GND)

CD1020

• Human Body Model (HBM) (All other pins)

• Machine Model (MM)

• Charge Device Model (CDM) (Corners pins)

• Charge Device Model (CDM) (All other pins)

±2000

±200

±750

±500

(3)

VESD5-3

VESD5-4

VESD6-2

Contact discharge

• VBATP(5)

• WAKE_B (series resistor 10 k

Ω)

• SGx and SPx pins with 100 nF capacitor (50

Ω series R)

±8000

(4)

Notes

Minimum value of –18 V is guaranteed by design for switch input voltage range (SGx, SPx).

ESD testing is performed in accordance AEC Q100, with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), the Machine Model

(MM) (CZAP = 200 pF, RZAP = 0 Ω), and the Charge Device Model (CDM).

CZAP = 330 pF, RZAP = 2.0 kΩ (powered and unpowered) / CZAP = 150 pF, RZAP = 330 Ω (unpowered)

External component requirements at system level:

Cbulk = 100 μF aluminum electrolytic capacitor

Cbypass= 100 nF ±37 % ceramic capacitor

Reverse blocking diode from Battery to VBATP (0.6 V < VF < 1 V). See Figure 22, Typical application diagram.

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