NXP Semiconductors

8

CD1020

4.2

Thermal characteristics

Table 4. Thermal ratings

All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage

to the device.

Symbol

Description (rating)

Min

Max

Unit

Notes

Thermal ratings

Operating Temperature

• Ambient

•Junction

–40

–40

125

150

°C

Storage Temperature

–65

150

°C

Peak Package Reflow Temperature During Reflow

–

–

°C

Thermal resistance

Junction-to-Ambient, Natural Convection, Single-Layer Board

• 32 QFN

—94

°C/W

(6),(7)

Junction-to-Board

• 32 QFN

—12

°C/W

(8)

Junction-to-Case (Bottom)

• 32 QFN

—

2.0

°C/W

(9)

Junction-to-Package (Top), Natural convection

• 32 QFN

—

2.0

°C/W

(10)

Package dissipation ratings

Thermal shutdown

• 32 QFN

155

185

°C

Thermal shutdown hysteresis

• 32 QFN

3.0

15

°C

Notes

6.

Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient

temperature, air flow, power dissipation of other components on the board, and board thermal resistance.

7.

Per JEDEC JESD51-2 with natural convection for horizontally oriented board. Board meets JESD51-9 specification for 1s or 2s2p board,

respectively.

8.

Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the

board near the package.

9.

Thermal resistance between the die and the solder pad on the bottom of the package based on simulation without any interface resistance.

10.

Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC

JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.