CD1020 datasheet(12/56 Pages) NXP

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NXP Semiconductors

CD1020

4.4.2

Dynamic electrical characteristics

Table 7. Dynamic electrical characteristics

TA = –40 °C to +125 °C, VDDQ = 3.1 V to 5.25 V, VBATP = 6.0 V to 28 V, unless otherwise specified. All SPI timing is performed with a

100 pF load on MISO, unless otherwise noted.

Symbol

Parameter

Min

Typ

Max

Units

Notes

General

tACTIVE

POR to active time

• Undervoltage to normal mode

250

340

450

µs

Switch input

tPULSE(ON)

Pulse wetting current timer

• Normal mode

tINT-DLY

Interrupt delay time

• Normal mode

——

18.5

µs

tPOLLING_TIMER

Polling timer accuracy

• Low-power mode

——

tACTIVEPOLLSGTIME Tactivepoll timer SG

49.5

66.5

µs

tACTIVEPOLLSBTIME

Tactivepoll timer SB

• SBPOLLTIME = 0

• SBPOLLTIME = 1

1.0

49.5

1.2

1.4

66.5

µs

tGLITCHTIMER

Input glitch filter timer

• Normal mode

5.0

—

µs

AMUX output

AMUXVALID

AMUX access time (selected output to selected output)

• CMUX = 1.0 nF, Rising edge of CS_B to selected

—

(22)

—

μs

AMUXVALIDTS

AMUX access time (tri-state to ON)

• CMUX = 1.0 nF, rising edge of CS_B to selected

——

μs

Oscillator

OSCTOLLPM

Oscillator tolerance at 192 kHz in low-power mode

–15

—

OSCTOLNOR

Oscillator tolerance normal mode at 4.0 MHz

–15

—

Interrupt

INTPULSE

INT pulse duration

• Interrupt occurs or INT_B request

100

110

µs

SPI interface

fOP

Transfer frequency

—

8.0

MHz

tSCK

SCLK period

• Figure 6 - 1

160

—

tLEAD

Enable lead time

• Figure 6 - 2

140

—

tLAG

Enable lag time

• Figure 6 - 3

—

tSCKHS

SCLK high time

• Figure 6 - 4

—

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