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LT8640 Datasheet(PDF) 3 Page - Analog Devices |
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LT8640 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 26 page  LT8642-1 3 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS Note 1: Stresses beyond those listed under may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT8642-1E is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The junction temperature (TJ, in °C) is calculated from the ambient temperature (TA in °C) and power dissipation (PD, in Watts) according to the formula: TJ = TA + (PD • θJA) where θJA (in °C/W) is the package thermal impedance. The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS VC Source Current VFB = 0.4V, VC = 1.25V 360 µA VC Sink Current VFB = 0.8V, VC = 1.25V 360 µA VC Pin to Switch Current Gain 8.5 A/V VC Clamp Voltage 2.6 V BIAS Pin Current Consumption VBIAS = 3.3V, fSW = 2MHz 20 mA Minimum On-Time ILOAD = 3A, SYNC = 2V l 20 35 ns Minimum Off-Time 80 110 ns Oscillator Frequency RT = 221k RT = 60.4k RT = 18.2k l l l 175 650 1.875 210 700 1.95 245 745 2.00 kHz kHz MHz Top Power NMOS On-Resistance 17.5 mΩ Top Power NMOS Current Limit Duty Cycle = 5% l 14.5 18 21.5 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V 8 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V 10 13 16 A SW Leakage Current VIN = 18V, VSW = 0V, 18V –15 15 µA EN/UV Pin Threshold EN/UV Rising l 0.93 0.99 1.05 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VFB VFB Rising l 5 8 11 % PG Lower Threshold Offset from VFB VFB Falling l –11 –8 –5 % PG Hysteresis 0.4 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 600 2000 Ω SYNC/MODE Threshold SYNC/MODE DC and Clock Low Level Voltage SYNC/MODE Clock High Level Voltage SYNC/MODE DC High Level Voltage l l l 0.6 2.2 1.5 2.9 V V V Spread Spectrum Modulation Frequency Range RT = 60.4k, VSYNC = 3.3V 22 % Spread Spectrum Modulation Frequency VSYNC = 3.3V 3 kHz SS Source Current l 1.2 1.9 2.6 µA SS Pull-Down Resistance Fault Condition, SS = 0.1V 200 Ω Note 3: θ values determined per JEDEC 51-7, 51-12. See the Applications Information section for information on improving the thermal resistance and for actual temperature measurements of a demo board in typical operating conditions. Note 4: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. |
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