LT4239 datasheet(4/24 Pages) AD

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LT4239

Rev. 0

For more information www.analog.com

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX UNITS

I(LEAK)

UV, IBOOST Input Leakage Current

V = 5V

±1

µA

VOUT(G2OFF)

OUT Voltage to Turn Off GATE2 After

Power Good

OUT Falling

3.5

3.7

3.9

Timer

VTMR(H)

STMR, CBTMR High Threshold Voltage

Rising

1.207

1.232

1.257

VTMR(L)

STMR, CBTMR Low Threshold Voltage

Falling

0.15

0.2

0.25

ISTMR(UP)

STMR Pull-Up Current

STMR = 1V, GATE1 Start-Up

-8

-10

-12

µA

ISTMR(DN)

STMR Pull-Down Current

STMR = 1V

125

170

µA

ICBTMR(UP)

CBTMR Pull-Up Current

CBTMR = 1V, In Overcurrent Fault

-8

-10

-12

µA

ICBTMR(DN)

CBTMR Pull-Down Current

CBTMR = 2V, No Faults

CBTMR = 2V, In Cool-Off Cycle

µA

DRETRY

Retry Duty Cycle During Overcurrent Fault

0.03

0.06

0.1

Current Monitor

∆VSENSE2(FS)

Input Sense Voltage Full-Scale

(VSENSE2 – VOUTK)

IBOOST = 0V, OUT = 12V

IBOOST = 3V, OUT = 12V

VIMON(OS)

IMON Input Offset Voltage

∆VSENSE2 = 0V, OUT = 12V

±800

µV

AIMON

IMON Voltage Gain

∆VSENSE2 = 1mV to 15mV, OUT = 12V

100

103

V/V

VIMON(MAX)

IMON Maximum Output Voltage

∆VSENSE2 = 50mV, OUT = 12V

4.5

4.9

5.5

RIMON(OUT)

IMON Internal Resistance

∆VSENSE2 = 0V, OUT = 12V

kΩ

BWIMON

IMON Bandwidth

200

kHz

Outputs

VOL

FLT, PG Output Low Voltage

I = 5mA

0.2

0.4

IOH

FLT, PG Input Leakage Current

V = 5V

±1

µA

Timing Delays

tPHL(SENSE1)

∆VSENSE1 Voltage High to GATE1 Low

∆VSENSE1 = 0V Step to 300mV

0.5

µs

tPHL(SENSE2)

∆VSENSE2 Voltage High to GATE2 Low

∆VSENSE2 = 0V Step to 80mV

0.5

µs

tTMR(ACL)

Overcurrent Fault Timer Delay

∆VSENSE1 = 0V Step to 100mV

∆VSENSE2 = 0V Step to 25mV

100

115

110

µs

tTMR(FET-BAD)

FET-Bad Fault Timer Delay

tD(PG)

Power Good Delay

tD(GATE1)

Debounced Turn-On Delay

UV = 0V Step to 2V

tOFF(GATE)

GATE Turn-Off Propagation Delay

UV = 2V Step to 0.8V

170

220

270

µs

tOFF(GATE2)

GATE2 Turn-Off Delay After Power Good

OUT = 12V Step to 0V

µs

tRST(UV)

UV Low to FLT High

UV = 2V Step to 0V

µs

ELECTRICAL CHARACTERISTICS The

denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, IBOOST = 0V, RDRAIN = 100kΩ, unless otherwise noted.

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: All currents into device pins are positive; all currents out of

the device pins are negative. All voltages are referenced to GND unless

otherwise specified.

Note 3: Limits on maximum rating is defined as whichever limit occurs

first. Internal clamps limit the GATE pins to a minimum of 10V above OUT

and a diode below OUT. Driving the GATE pins to voltages beyond the

clamps may damage the device.

Note 4: Thermal resistance is specified when the exposed pad is soldered

to a 3-inch × 5-inch, four layer, FR4 board.

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