MPC8610EC datasheet(89/96 Pages) NXP

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Hardware Design Considerations

MPC8610 Integrated Host Processor Hardware Specifications, Rev. 2

Freescale Semiconductor

modeled as a collapsed thermal resistance with thermal conductivity of 12.1 W/(m • K) and an effective height of 0.1 mm. The

thermal model uses median dimensions to reduce grid. Please refer to the case outline for actual dimensions.

The thermal model uses approximate dimensions to reduce grid. The approximations used do not impact thermal performance.

Please refer to the case outline for exact dimensions.

Figure 57. MPC8610 Thermal Model

3.12.2.5

Temperature Diode

The MPC8610 has a temperature diode on the microprocessor that can be used in conjunction with other system temperature

monitoring devices (such as Analog Devices, ADT7461™). These devices use the negative temperature coefficient of a diode

operated at a constant current to determine the temperature of the microprocessor and its environment. For proper operation,

the monitoring device used should auto-calibrate the device by canceling out the VBE variation of each MPC8610’s internal

diode.

The following are the specifications of the MPC8610 on-board temperature diode:

Vf > 0.40 V

Vf < 0.90 V

Operating range 2–300

μA

Diode leakage < 10 nA @ 125

°C

Bump and Underfill

Die

Substrate

Solder/Air

Die

Substrate

Side View of Model (Not to Scale)

Top View of Model (Not to Scale)

Conductivity

Value

Unit

Die (8.5 x 9.7 x 0.86mm)

Silicon

Temperature

dependent

Bump and Underfill (8.5

× 9.7 × 0.07 mm)

Collapsed Resistance

8.1

W/(m • K)

Substrate (29

× 29 × 1.18 mm)

23.3

W/(m • K)

23.3

0.95

Solder and Air (29

× 29 × 0.4 mm)

0.034

W/(m • K)

0.034

12.1

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