| Electronic Components Datasheet Search |
|
LTC4253IGN Datasheet(PDF) 11 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LTC4253IGN Datasheet(HTML) 11 Page - Linear Technology |
|
11 / 32 page ![]() LTC4253 11 4253f the fault current as measured at SENSE. Compensation capacitor, CC, at GATE stabilizes this loop. A comparator monitors GATE to ensure that it is low before allowing an initial timing cycle, GATE ramp up after an overvoltage event or restart after a current limit fault. During GATE start-up, a second comparator detects GATE within 2.8V of VIN before PWRGD1 can be set and power good sequencing starts. DRAIN (Pin 10): Drain Sense Input. Connecting an exter- nal resistor, RD between this pin and the MOSFET's drain (VOUT) allows voltage sensing below 6.15V and current feedback to TIMER. A comparator detects if DRAIN is below 2.385V and together with the GATE high compara- tor, sets the PWRGD1 flag. If VOUT is above VDRNCL, the DRAIN pin is clamped at approximately VDRNCL. RD cur- rent is internally multiplied by 8 and added to TIMER's 200 µAduringacircuitbreakerfaultcycle.Thisreducesthe fault time and MOSFET heating. OV (Pin 11): Over-Voltage Input. The active high threshold at the OV pin is set at 6.15V with 0.3V hysteresis. If OV > 6.15V, GATE pulls low. When OV returns below 5.85V, GATE start-up begins without an initial timing cycle. If OV occurs in the middle of an initial timing cycle, the initial timing cycle is restarted after OV goes away. OV does not reset the latched fault or PWRGD1 flag. The internal UVLO at VIN always overrides OV. A 1nF to 10nF capacitor at OV prevents transients and switching noise from affecting the OV thresholds and prevents glitches at the GATE. UV (Pin 12): Under-Voltage Input. The active low thresh- old at the UV pin is set at 2.925V with 0.3V hysteresis. If UV < 2.925V, PWRGD1 pulls high, both GATE and TIMER pull low. If UV rises above 3.225V, this initiates an initial timing cycle followed by GATE start-up. The internal UVLO at VIN always overrides UV. A low at UV resets an internal fault latch. A 1nF to 10nF capacitor at UV prevents tran- sients and switching noise from affecting the UV thresh- olds and prevents glitches at the GATE pin. TIMER (Pin 13): Timer Input. Timer is used to generate an initial timing delay at start-up, and to delay shutdown in the event of an output overload (circuit breaker fault). Timer starts an initial timing cycle when the following conditions are met: RESET is low, UV is high, OV is low, VIN clears UVLO, TIMER pin is low, GATE pin is lower than VGATEL, SS < 0.2V, and VSENSE-VEE < VCB. A pull-up current of 5µA then charges CT, generating a time delay. If CT charges to VTMRH (4V), the timing cycle terminates. TIMER quickly pulls low and GATE is activated. If SENSE exceeds 50mV while GATE is high, a circuit breaker cycle begins with a 200 µA pull-up current charg- ing CT. If DRAIN is approximately 7V during this cycle, the timer pull-up has an additional current of 8 • IDRN. If SENSE drops below 50mV before TIMER reaches 4V, a 5 µA pull- down current slowly discharges the CT. In the event that CT eventually integrates up to the VTMRH (4V) threshold, the circuit breaker trips, GATE quickly pulls low and the PWRGD1 pulls high. TIMER latches high with a 5 µA pull- up source. This latched fault may be cleared by driving RESET high until TIMER is pulled low. Other ways of clearing the fault include pulling the VIN pin momentarily below (VLKO – VLKH), pulling TIMER low with an external device or pulling UV below 2.925V. SQTIMER (Pin 14): Sequencing Timer Input. The se- quencing timer provides a delay tSQT for the power good sequencing. This delay is programmed by connecting an appropriate capacitor to this pin. If the SQTIMER capacitor is omitted, the SQTIMER pin ramps from 0V to 4V in about 300 µs. EN3 (Pin 15): Power Good Status Output Three Enable. This is a TTL compatible input that is used to control the PWRGD3 output. When EN3 is driven low, PWRGD3 will go high. When EN3 is driven high, PWRGD3 will go low provided PWRGD2 has been active for for more than one power good sequence delay (tSQT). EN3 can be used to control the power good sequence. This pin is internally pulled low by a 120 µA current source. PWRGD3 (Pin 16): Power Good Status Output Three. Power good sequence starts with PWRGD1 latching active low. PWRGD3 will latch active low after EN3 goes high and after one power good sequence delay tSQT provided by the sequencing timer from the time PWRGD2 goes low, whichever comes later. PWRGD3 is reset by PWRGD1 going high or EN3 going low. This pin is internally pulled high by a 50 µA current source. PI FU CTIO S |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |