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RF5216 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF5216 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 22 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS20151001 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 22 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (VCC, VBATT) -1.2 to 6.0 V Control Voltage (VRAMP) -0.3 to 3.0 V Digital control signals, SCLK, SDATA, VIO 2.0 V RF Input Power for 2G PA 10 dBm RF Input Power for all TRX Ports 31 dBm Transmit Duty Cycle, Period = 4.6ms 50 % Output Load VSWR 20:1 Operating Temperature Range -30 to +85 °C Storage Temperature Range -55 to +150 °C ESD Rating – Human Body Model (HBM, JESD22-A114) 1000 V ESD Rating – Charged Device Model (CDM, JESD22-C101C) 500 V Moisture Sensitivity Level MSL3 Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Performance Specifications Parameter Specification Unit Condition Min Typ Max General Requirements TA = 25°C, unless otherwise specified Operating Ambient Temperature (TA) -30 25 85 °C Supply Voltage, VCC 3.0 3.5 4.6 V Normal operating range Supply Voltage, VBATT 2.8 3.5 4.6 V Normal operating range Supply Leakage Current 10 µA VRAMP Voltage 0.16 V GSM transmit; minimum RF output power 1.8 V GSM transmit; maximum RF output power 1.65 1.8 V EDGE transmit VRAMP Capacitance 10 pF DC to 200kHz VRAMP Current 10 µA Supply Voltage, VIO 1.65 1.8 2.0 V MIPI RFFE supply voltage MIPI RFFE logic low (SCLK, SDATA) 0 0.3*VIO V MIPI RFFE logic high (SCLK, SDATA) 0.7*VIO VIO V VIO Rise Time 450 µs Required for device reset Control Current (MIPI Digital Inputs) 50 µA Turn-on Time 20 µs From application of VBATT and VIO Switching Speed 2 5 µs Port to Port RF Port Impedance 50 Ω Pins 2, 3, 17, 22, 24 to 37 |
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