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RF5216 Datasheet(PDF) 4 Page - RF Micro Devices |
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RF5216 Datasheet(HTML) 4 Page - RF Micro Devices |
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4 / 22 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS20151001 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 22 RF5216 Parameter Specification Unit Condition Min Typ Max Transmit, EDGE, Low Band Nominal test conditions unless otherwise stated; All unused ports terminated in 50 Ω; VCC=VBATT=3.5V; POUT=27.5dBm; TA=+25°C; Duty Cycle=25%; Period=4.6ms. Frequency 824 849 MHz GSM800 Band 880 915 MHz GSM900 Band Input VSWR 2.5 X:1 Linear Output Power (POUT) 27.5 28 dBm 26 dBm VCC=3.2V to 4.6V; TA=-30°C to +85°C Gain 30 32 34 dB Peak Supply Current 775 mA Efficiency (PAE) 20 % Modulation Spectrum 200kHz offset -33 dBc POUT=27.5dBm Modulation Spectrum 400kHz offset -58 dBc Modulation Spectrum 600kHz offset -65 dBc EVM Peak 12 % EVM RMS 3 5 % Noise Power 736MHz to 757MHz -83 dBm 5dBm ≤ P OUT ≤ 27.5dBm; RBW=100kHz Noise Power 757MHz to 763MHz -80 dBm Noise Power 869MHz to 894MHz -83 dBm Noise Power 925MHz to 935MHz -80 dBm Noise Power 935MHz to 960MHz -83 dBm Noise Power 1805MHz to 1880MHz -90 dBm Noise Power 1930MHz to 1990MHz -90 dBm Stability (Spurious), VSWR 10:1 -36 dBm VSWR=10:1; all phase angles; PIN adjusted for POUT=27.5 dBm into 50Ω load. |
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