INA159 datasheet(35/51 Pages) TI2

35 / 51 page

INA826

www.ti.com

SBOS562G – AUGUST 2011 – REVISED JUNE 2020

Product Folder Links: INA826

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12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation see the following:

•

Texas Instruments, OPAx330 50-μV VOS, 0.25-μV/°C, 35-μA CMOS Operational Amplifiers Zerø-Drift Series

data sheet

•

Texas Instruments, REF32xx 4ppm/°C, 100μA, SOT23-6 Series Voltage Reference data sheet

•

Texas Instruments, REF50xx Low-Noise, Very Low Drift, Precision Voltage Reference data sheet

•

Texas Instruments, INA333 Micro-Power (50μA), Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier data

sheet

•

Texas Instruments, PGA280 Zerø-Drift, High-Voltage, Programmable Gain Instrumentation Amplifier data

sheet

•

Texas Instruments, INA159 Precision, Gain of 0.2 Level Translation Difference Amplifier data sheet

•

Texas Instruments, PGA11x Zerø-Drift Programmable Gain Amplifier With Mux data sheet

•

Texas Instruments, INA826EVM User's Guide

•

Texas Instruments, TINA-TI software folder

12.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

12.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

12.4 Trademarks

E2E is a trademark of Texas Instruments.

PhotoMOS is a registered trademark of Panasonic Electric Works Europe AG.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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