5

INA826

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SBOS562G – AUGUST 2011 – REVISED JUNE 2020

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Copyright © 2011–2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Short-circuit to VS / 2.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

–20

20

V

Signal input pins

Voltage

(–VS) – 40

(+VS) + 40

V

REF pin

–20

+20

Output short-circuit(2)

Continuous

Temperature

Operating, TA

–50

150

°C

Junction, TJ

175

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

Machine model (MM)

±150

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

Single-supply

3

36

V

Dual-supply

±1.5

±18

Specified temperature, TA

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

INA826

UNIT

D (SOIC)

DGK (VSSOP)

DRG (WSON)

8 PINS

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

141.4

215.4

50.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

75.4

66.3

60.0

°C/W

RθJB

Junction-to-board thermal resistance

59.6

97.8

25.4

°C/W

ψJT

Junction-to-top characterization parameter

27.4

10.5

1.2

°C/W

ψJB

Junction-to-board characterization parameter

59.1

96.1

25.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

7.2

°C/W