5

TPA2016D2

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SLOS524E – JUNE 2008 – REVISED MAY 2016

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Copyright © 2008–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted).

(1)

MIN

MAX

UNIT

VDD

Supply voltage

AVDD, PVDDR, PVDDL

–0.3

6

V

Input voltage

SDZ, INR+, INR–, INL+, INL–

–0.3

VDD + 0.3

V

SDA, SCL

–0.3

6

Continuous total power dissipation

See Dissipation Ratings

TA

Operating free-air temperature

–40

85

°C

TJ

Operating junction temperature

–40

150

°C

RLOAD

Minimum load resistance

3.2

Ω

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

7.3 Recommended Operating Conditions

MIN

MAX

UNIT

VDD

Supply voltage

AVDD, PVDDR, PVDDL

2.5

5.5

V

VIH

High-level input voltage

SDZ, SDA, SCL

1.3

V

VIL

Low-level input voltage

SDZ, SDA, SCL

0.6

V

TA

Operating free-air temperature

–40

+85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

THERMAL METRIC(1)

TPA2016D2

UNIT

YZH (DSBGA)

RTJ (QFN)

16 PINS

20 PINS

RθJA

Junction-to-ambient thermal resistance

71

33.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

0.4

22.5

°C/W

RθJB

Junction-to-board thermal resistance

14.4

9.6

°C/W

ψJT

Junction-to-top characterization parameter

1.9

0.2

°C/W

ψJB

Junction-to-board characterization parameter

13.6

9.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

2.4

°C/W