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LM5145 Datasheet(PDF) 47 Page - Texas Instruments |
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LM5145 Datasheet(HTML) 47 Page - Texas Instruments |
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47 / 60 page ![]() 7.4.2 Layout Example Figure 7-23 shows a single-sided layout of a synchronous buck regulator with discrete power MOSFETs, Q1 and Q2, in SON 5mm × 6mm case size. The power stage is surrounded by a GND pad geometry to connect an EMI shield if needed. The design uses layer 2 of the PCB as a power-loop return path directly underneath the top layer to create a low-area switching power loop of approximately 2mm². This loop area, and hence parasitic inductance, must be as small as possible to minimize EMI as well as switch-node voltage overshoot and ringing. The high-frequency power loop current flows through MOSFETs Q1 and Q2, through the power ground plane on layer 2, and back to VIN through the 0402 ceramic capacitors C14 through C19. The currents flowing in opposing directions in the vertical loop configuration provide field self-cancellation, reducing parasitic inductance. Figure 7-25 shows a side view to illustrate the concept of creating a low-profile, self-canceling loop in a multilayer PCB structure. The layer 2 GND plane layer, shown in Figure 7-24, provides a tightly-coupled current return path directly under the MOSFETs to the source terminals of Q2. Six 10nF input capacitors with small 0402 or 0603 case size are placed in parallel very close to the drain of Q1. The low equivalent series inductance (ESL) and high self-resonant frequency (SRF) of the small footprint capacitors yield excellent high-frequency performance. The negative terminals of these capacitors are connected to the layer-2 GND plane with multiple 12mil (0.3mm) diameter vias, further minimizing parasitic loop inductance. Inductor VIN VOUT GND Input Caps SW PGND VCC AGND VIN GND LO GND Copper island connected to AGND pin HO Output Caps Locate controller close to the power stage Shunt Use paralleled 0402/0603 input capacitors close to the FETs for VIN to PGND decoupling Low-side FET High-side FET Place PGND vias close to the source of the low-side FET Optional shield GND connection Use PGND cut-out to minimize eddy currents DCR Sense Figure 7-23. PCB Top Layer – High Density, Single-sided Design Additional guidelines to improve noise immunity and reduce EMI are as follows: www.ti.com LM25139 SLVSJ80 – OCTOBER 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 47 Product Folder Links: LM25139 |
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