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LM5145 Datasheet(PDF) 47 Page - Texas Instruments

Part # LM5145
Description  LM25139 42V, Synchronous Buck DC/DC Controller With Dual Random Spread Spectrum for Advanced EMI Mitigation
PDF  60 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

LM5145 Datasheet(HTML) 47 Page - Texas Instruments

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7.4.2 Layout Example
Figure 7-23 shows a single-sided layout of a synchronous buck regulator with discrete power MOSFETs, Q1 and
Q2, in SON 5mm × 6mm case size. The power stage is surrounded by a GND pad geometry to connect an
EMI shield if needed. The design uses layer 2 of the PCB as a power-loop return path directly underneath the
top layer to create a low-area switching power loop of approximately 2mm². This loop area, and hence parasitic
inductance, must be as small as possible to minimize EMI as well as switch-node voltage overshoot and ringing.
The high-frequency power loop current flows through MOSFETs Q1 and Q2, through the power ground plane
on layer 2, and back to VIN through the 0402 ceramic capacitors C14 through C19. The currents flowing in
opposing directions in the vertical loop configuration provide field self-cancellation, reducing parasitic inductance.
Figure 7-25 shows a side view to illustrate the concept of creating a low-profile, self-canceling loop in a
multilayer PCB structure. The layer 2 GND plane layer, shown in Figure 7-24, provides a tightly-coupled current
return path directly under the MOSFETs to the source terminals of Q2.
Six 10nF input capacitors with small 0402 or 0603 case size are placed in parallel very close to the drain of
Q1. The low equivalent series inductance (ESL) and high self-resonant frequency (SRF) of the small footprint
capacitors yield excellent high-frequency performance. The negative terminals of these capacitors are connected
to the layer-2 GND plane with multiple 12mil (0.3mm) diameter vias, further minimizing parasitic loop inductance.
Inductor
VIN
VOUT
GND
Input Caps
SW
PGND
VCC
AGND
VIN
GND
LO
GND
Copper island
connected to AGND
pin
HO
Output Caps
Locate controller close to the
power stage
Shunt
Use paralleled 0402/0603 input
capacitors close to the FETs for VIN
to PGND decoupling
Low-side
FET
High-side
FET
Place PGND vias close to the
source of the low-side FET
Optional shield
GND connection
Use PGND cut-out to
minimize eddy currents
DCR Sense
Figure 7-23. PCB Top Layer – High Density, Single-sided Design
Additional guidelines to improve noise immunity and reduce EMI are as follows:
www.ti.com
LM25139
SLVSJ80 – OCTOBER 2025
Copyright © 2025 Texas Instruments Incorporated
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Product Folder Links: LM25139



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