ECP2 datasheet(55/386 Pages) LATTICE

55 / 386 page

3-3

DC and Switching Characteristics

Lattice Semiconductor

LatticeECP2/M Family Data Sheet

DC Electrical Characteristics

Over Recommended Operating Conditions

Symbol

Parameter

Condition

Min.

Typ.

Max.

Units

IIL, IIH

Input or I/O Low Leakage

0 ≤ VIN ≤ (VCCIO - 0.2V)

—

µA

IIH

Input or I/O High Leakage

(VCCIO - 0.2V) < VIN ≤ 3.6V

—

150

µA

IPU

I/O Active Pull-up Current

0 ≤ VIN ≤ 0.7 VCCIO

-30

—

-210

µA

IPD

I/O Active Pull-down Current

VIL (MAX) ≤ VIN ≤ VIH (MAX)

—

210

µA

IBHLS

Bus Hold Low Sustaining Current VIN = VIL (MAX)

—

µA

IBHHS

Bus Hold High Sustaining Current VIN = 0.7 VCCIO

-30

—

µA

IBHLO

Bus Hold Low Overdrive Current

0 ≤ VIN ≤ VCCIO

—

210

µA

IBHHO

Bus Hold High Overdrive Current 0 ≤ VIN ≤ VCCIO

—

-210

µA

VBHT

Bus Hold Trip Points

0 ≤ VIN ≤ VIH (MAX)

VIL (MAX)

—

VIH (MIN)

I/O Capacitance

VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,

VCC = 1.2V, VIO = 0 to VIH (MAX)

—8

—

Dedicated Input Capacitance

VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,

VCC = 1.2V, VIO = 0 to VIH (MAX)

—6

—

1. Input or I/O leakage current is measured with the pin conﬁgured as an input or as an I/O with the output driver tri-stated. It is not measured

with the output driver active. Bus maintenance circuits are disabled.

2. TA 25

oC, f = 1.0MHz.

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