7516 datasheet(75/90 Pages) RENESAS

75 / 90 page

Rev.1.01

Jul 01, 2003

page 75 of 89

7516 Group

Flash memory Electrical characteristics

Table 20 Absolute maximum ratings

Power source voltage

Input voltage

P00–P07, P10–P17, P20, P21,

P24–P27, P30–P37, P40–P47,

VREF

Input voltage

P22, P23

Input voltage

RESET, XIN

Input voltage

CNVSS

Output voltage P00–P07, P10–P17, P20, P21,

P24–P27, P30–P37, P40–P47,

XOUT

Output voltage P22, P23

Power dissipation

Operating temperature

Storage temperature

VCC

Topr

Tstg

Symbol

Parameter

Conditions

Ratings

–0.3 to 6.5

–0.3 to VCC +0.3

–0.3 to 5.8

–0.3 to VCC +0.3

–0.3 to 6.5

–0.3 to VCC +0.3

–0.3 to 5.8

300

25±5

–40 to 125

°C

Unit

Ta = 25 °C

All voltages are based on VSS.

Output transistors are cut off.

Table 21 Flash memory mode Electrical characteristics

(Ta = 25 oC, VCC = 4.5 to 5.5V unless otherwise noted)

VPP power source current (read)

VPP power source current (program)

VPP power source current (erase)

VPP power source voltage

VCC power source voltage

Limits

Parameter

Min.

Typ.

Max.

Symbol

Unit

VPP = VCC

Microcomputer mode operation at

VCC = 2.7 to 5.5V

Microcomputer mode operation at

VCC = 2.7 to 3.6V

Conditions

IPP1

IPP2

IPP3

VPP

VCC

4.5

100

5.5

µA

4.5

3.0

5.5

3.6

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