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SE97BTP Datasheet(PDF) 39 Page - NXP Semiconductors |
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SE97BTP Datasheet(HTML) 39 Page - NXP Semiconductors |
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39 / 53 page ![]() SE97B_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 27 January 2010 39 of 53 NXP Semiconductors SE97B DDR memory module temp sensor with integrated SPD [1] If the temperature sensor is not needed it should be placed in standby, which will reduce IDD(AV) to 0.1 μA typical at room temperature or 3.0 μA typical at 125 °C. [2] High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.). When VDD is 3.6 V, then II(ov) >4.8 V +VDD or > 4.8 V + 3.6 V then the minimum voltage is 8.4 V. Table 31. DC characteristics VDD = 3.0 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit VDD supply voltage 3.0 - 3.6 V IDD(AV) average supply current SMBus inactive [1] - 210 320 μA IDD supply current fSCL = 400 kHz - 250 400 μA Isd(VDD) supply voltage shutdown mode current SMBus inactive - 0.1 10 μA VIH HIGH-level input voltage SCL, SDA 0.7 × V DD -VDD +1 V VIL LOW-level input voltage SCL, SDA −0.5 - +0.3 × V DD V VI(ov) overvoltage input voltage pin A0; VI(ov) − VDD >4.8 V [2] 7.0 - 10 V VOL LOW-level output voltage SDA, EVENT IOL =0.7 mA - - 0.2 V IOL =2.1 mA - - 0.4 V IOL =3.0 mA - - 0.5 V VI(hys) hysteresis of input voltage VDD ≥ 2.2 V 0.05 × V DD -- V VDD ≤ 2.2 V 0.10 × V DD -- V Vth(POR)H HIGH-level power-on reset threshold voltage device operation voltage increase - - 2.9 V Vth(rec)POR power-on reset recovery threshold voltage device reset voltage decrease 1.2 1.8 - V ILOH HIGH-level output leakage current EVENT; VOH =VDD −1.0 - +1.0 μA ILIH HIGH-level input leakage current SDA, SCL; VI =VDD −1.0 - +1.0 μA ILIL LOW-level input leakage current SDA, SCL; VI =VSS −1.0 - +1.0 μA A0, A1, A2; VI =VSS −1.0 - +1.0 μA Ci(SCL/SDA) SCL and SDA input capacitance -5 8 pF Ci(addr) address input capacitance - 5 10 pF Ipd pull-down current internal; A0, A1, A2 pins; VI =0.3VDD to VDD -- 4.0 μA ZIL LOW-level input impedance pins A0, A1, A2; VI <0.3VDD 30 - - k Ω ZIH HIGH-level input impedance pins A0, A1, A2; VI ≥ 0.3VDD 800 - - k Ω |
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