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SE97BTP Datasheet(PDF) 39 Page - NXP Semiconductors

Part # SE97BTP
Description  DDR memory module temp sensor with integrated SPD
PDF  53 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

SE97BTP Datasheet(HTML) 39 Page - NXP Semiconductors

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SE97B_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 January 2010
39 of 53
NXP Semiconductors
SE97B
DDR memory module temp sensor with integrated SPD
[1]
If the temperature sensor is not needed it should be placed in standby, which will reduce IDD(AV) to 0.1 μA typical at room temperature or
3.0
μA typical at 125 °C.
[2]
High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.).
When VDD is 3.6 V, then II(ov) >4.8 V +VDD or > 4.8 V + 3.6 V then the minimum voltage is 8.4 V.
Table 31.
DC characteristics
VDD = 3.0 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
supply voltage
3.0
-
3.6
V
IDD(AV)
average supply current
SMBus inactive
[1] -
210
320
μA
IDD
supply current
fSCL = 400 kHz
-
250
400
μA
Isd(VDD)
supply voltage shutdown
mode current
SMBus inactive
-
0.1
10
μA
VIH
HIGH-level input voltage
SCL, SDA
0.7
× V
DD
-VDD +1
V
VIL
LOW-level input voltage
SCL, SDA
−0.5
-
+0.3
× V
DD
V
VI(ov)
overvoltage input voltage
pin A0; VI(ov) − VDD >4.8 V
[2] 7.0
-
10
V
VOL
LOW-level output voltage
SDA, EVENT
IOL =0.7 mA
-
-
0.2
V
IOL =2.1 mA
-
-
0.4
V
IOL =3.0 mA
-
-
0.5
V
VI(hys)
hysteresis of input voltage
VDD ≥ 2.2 V
0.05
× V
DD
--
V
VDD ≤ 2.2 V
0.10
× V
DD
--
V
Vth(POR)H
HIGH-level power-on reset
threshold voltage
device operation voltage increase
-
-
2.9
V
Vth(rec)POR
power-on reset recovery
threshold voltage
device reset voltage decrease
1.2
1.8
-
V
ILOH
HIGH-level output leakage
current
EVENT; VOH =VDD
−1.0
-
+1.0
μA
ILIH
HIGH-level input leakage
current
SDA, SCL; VI =VDD
−1.0
-
+1.0
μA
ILIL
LOW-level input leakage
current
SDA, SCL; VI =VSS
−1.0
-
+1.0
μA
A0, A1, A2; VI =VSS
−1.0
-
+1.0
μA
Ci(SCL/SDA) SCL and SDA input
capacitance
-5
8
pF
Ci(addr)
address input capacitance
-
5
10
pF
Ipd
pull-down current
internal; A0, A1, A2 pins;
VI =0.3VDD to VDD
--
4.0
μA
ZIL
LOW-level input impedance
pins A0, A1, A2; VI <0.3VDD
30
-
-
k
Ω
ZIH
HIGH-level input impedance
pins A0, A1, A2; VI ≥ 0.3VDD
800
-
-
k
Ω



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