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LPC3240 Datasheet(PDF) 48 Page - NXP Semiconductors |
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LPC3240 Datasheet(HTML) 48 Page - NXP Semiconductors |
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48 / 73 page ![]() LPC3220_30_40_50_1 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 01 — 6 February 2009 48 of 73 NXP Semiconductors LPC3220/30/40/50 16/32-bit ARM microcontrollers 10.2 ADC static characteristics [1] Conditions: VSSA = 0 V (on pin VSS_AD); VDDA(3V3) = 3.3 V (on pin VDD_AD). [2] The ADC is monotonic; there are no missing codes. [3] The differential linearity error (ED) is the difference between the actual step width and the ideal step width. See Figure 4. [4] The integral non-linearity (EL(adj)) is the peak difference between the center of the steps of the actual and the ideal transfer curve after appropriate adjustment of gain and offset errors. See Figure 4. [5] The offset error (EO) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the ideal curve. See Figure 4. [6] The gain error (EG) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset error, and the straight line which fits the ideal transfer curve. See Figure 4. [7] The absolute error (ET) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated ADC and the ideal transfer curve. See Figure 4. Table 8. ADC static characteristics VDDA(3V3) = 3.3 V; Tamb =25°C unless otherwise specified; ADC clock frequency 4.5 MHz. Symbol Parameter Conditions Min Typ Max Unit VIA analog input voltage 0 - VDDA(3V3) V Cia analog input capacitance - - 1 pF ED differential linearity error [1][2][3] - ±0.5 ±1 LSB EL(adj) integral non-linearity [1][4] - ±0.6 ±1 LSB EO offset error [1][5] - ±1 ±3 LSB EG gain error [1][6] - ±0.3 ±0.6 % ET absolute error [1][7] - ±4 LSB Rvsi voltage source interface resistance - - 40 k Ω |
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