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LPC3240 Datasheet(PDF) 53 Page - NXP Semiconductors |
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LPC3240 Datasheet(HTML) 53 Page - NXP Semiconductors |
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53 / 73 page ![]() LPC3220_30_40_50_1 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 01 — 6 February 2009 53 of 73 NXP Semiconductors LPC3220/30/40/50 16/32-bit ARM microcontrollers 11.3 SDR SDRAM Controller [1] Parameters are valid over operating temperature range unless otherwise specified. [2] Typical values valid for EMC pads set to high slew rate: VDD_EMC = 1.8 V, VDD_CORE = 1.2 V or low slew rate: VDD_EMC = 3.3 V, VDD_CORE = 1.2 V. [3] All min or max values valid for EMC pads set to high slew rate: VDD_EMC = 1.8 V, VDD_CORE = 1.2 V or low slew rate: VDD_EMC = 3.3 V, VDD_CORE = 1.2 V. [4] foper = 1/tCK. [5] Applies to signals: EMC_DQM[3:0], EMC_DYCSm, EMC_RAS, EMC_CAS, EMC_WR, EMC_CKEm. [6] CMD_DLY = COMMAND_DELAY bitfield in SDRAMCLK_CTRL[18:14] register, see External memory controller (EMC) chapter in LPC32x0 User manual. 11.4 DDR SDRAM controller Table 11. EMC SDR SDRAM memory interface dynamic characteristics Tamb = −40 °C to +85 °C, unless otherwise specified.[1][3] Symbol Parameter Min Typical[2] Max Unit foper operating frequency [4] 104 133 MHz tCK clock cycle time - 9.6 - ns tCL CK LOW-level width - 4.8 - ns tCH CK HIGH-level width - 4.8 - ns td(V)ctrl control valid delay time [5][6] - (CMD_DLY × 0.25) + 2.7 ns th(ctrl) control hold time [5][6] (CMD_DLY × 0.25) + 1.2 - ns td(AV) address valid delay time [6] - (CMD_DLY × 0.25) + 3.2 ns th(A) address hold time [6] (CMD_DLY × 0.25) + 1.2 - ns td(QV) data output valid delay time [6] - (CMD_DLY × 0.25) + 3.5 ns th(Q) data output hold time [6] (CMD_DLY × 0.25) + 1.2 - ns tsu(D) data input set-up time - 0.6 - ns th(D) data input hold time - 0.9 - ns tQZ data output high-impedance time - - < tCK ns Fig 7. SDR SDRAM signal timing 002aae420 EMC_CLK output signal (O) input signal (I) td(V)ctrl, td(AV), td(QV) th(ctrl), th(Q), th(A) th(D) tsu(D) tCK tCL tCH tQZ |
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