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MPC5606S Datasheet(PDF) 92 Page - Freescale Semiconductor, Inc |
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MPC5606S Datasheet(HTML) 92 Page - Freescale Semiconductor, Inc |
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92 / 136 page ![]() MPC5606S Microcontroller Data Sheet, Rev. 6 Freescale Semiconductor 92 3.16 Flash memory electrical characteristics Table 46. Slow internal RC oscillator (128 kHz) electrical characteristics Symbol C Parameter Conditions1 1 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 105 °C, unless otherwise specified. Value Unit Min Typ Max fSIRC CC P Slow internal RC oscillator low frequency TA = 25 °C, trimmed — 128 — kHz SR — — 100 150 SIRCVAR CC C Slow internal RC oscillator variation across temperature (TA = -40°C to 105°C) and supply with respect to fSIRC at TA = 25 °C in high frequency configuration Trimmed -10% +10% kHz ISIRC CC D Slow internal RC oscillator low frequency current TA = 25 °C, trimmed — — 5 µA tSIRCSU CC C Slow internal RC oscillator start-up time TA = 25 °C, VDD = 5.0 V ± 10% — 8 12 µs Table 47. Program and erase specifications Symbol C Parameter Value Unit Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. Initial max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Tdwprogram CC C Double word (64 bits) program time4 4 Actual hardware programming times. This does not include software overhead. 22 50 500 µs T16kpperase CC C 16 KB block pre-program and erase time 300 500 5000 ms T32kpperase CC C 32 KB block pre-program and erase time 400 600 5000 ms T128kpperase CC C 128 KB block pre-program and erase time 800 1300 7500 ms Teslat CC D Erase suspend latency — 30 30 µs |
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