High Current H-Bridge

BTM7745G

General Product Characteristics

Data Sheet

6

Rev. 1.0, 2010-05-28

5

General Product Characteristics

5.1

Absolute Maximum Ratings

T

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Max.

Supply voltage

V

S

-0.3

45

V

–

Logic Input Voltage

V

V

INH

-0.3

5.5

V

–

HS/LS continuous drain current

I

D(HS)

I

D(LS)

-3.2

3.2

A

switch active

Voltage at ST pin

V

ST

-0.3

45

V

–

ST pin continuous current

I

ST

0

2

mA

–

ST pin peak current

I

ST

0

4

mA

t

Thermal Maximum Ratings

Junction temperature

T

j

-40

150

°C

–

Storage temperature

T

stg

-55

150

°C

–

ESD Susceptibility

ESD susceptibility

IN1, IN2, ST, INH

OUT1, OUT2, GND, VS

V

ESD

-2

-4

2

4

kV

2) HBM according to EIA/JESD 22-A 114B (1.5 k

Ω, 100pF)

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

1) Not subject to production test, specified by design.

5.1.1

5.1.2

5.1.3

5.1.4

5.1.5

5.1.6

5.1.7

5.1.8

5.1.9