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WM8310 Datasheet(PDF) 285 Page - Wolfson Microelectronics plc |
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WM8310 Datasheet(HTML) 285 Page - Wolfson Microelectronics plc |
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285 / 291 page ![]() Pre-Production WM8310 w PP, May 2012, Rev 3.1 285 To select a specific Hot Battery threshold, the required NTC bias resistor value may be calculated using the following equation: RBIAS = (rHOT / 0.534) x R25 rHOT is the NTC thermistor resistance ratio at the desired temperature threshold R25 is the NTC thermistor resistance at 25C For example, at 60 C the Vishay Curve 1 resistance ratio, rHOT, is 0.2488. Therefore, to implement a 60 C Hot Battery threshold, assuming a 100k NTC thermistor (at 25C), the required NTC bias resistor is 46.6k (nearest E12 value 47k). The resultant Cold Battery threshold is given using the rCOLD equation below. The rCOLD value needs to be referenced to the Vishay Curve 1 resistance chart in order to find the corresponding temperature. To select a specific Cold Battery threshold, the required NTC bias resistor value may be calculated using the following equation: RBIAS = (rCOLD / 3.255) x R25 rCOLD is the NTC thermistor resistance ratio at the desired temperature threshold R25 is the NTC thermistor resistance at 25C For example, at 5 C the Vishay Curve 1 resistance ratio, rCOLD, is 2.540. Therefore, to implement a 5 C Cold Battery threshold, assuming a 100k NTC thermistor (at 25C), the required NTC bias resistor is 78k (nearest E12 value 82k). The resultant Hot Battery threshold is given using the rHOT equation below. The rHOT value needs to be referenced to the Vishay Curve 1 resistance chart in order to find the corresponding temperature. To select both the Hot Battery threshold and the Cold Battery threshold, an additional resistor, R1, is required, as illustrated in Figure 38. Figure 38 Battery Temperature Threshold Selection |
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