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HT32F52230 Datasheet(PDF) 28 Page - Holtek Semiconductor Inc |
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HT32F52230 Datasheet(HTML) 28 Page - Holtek Semiconductor Inc |
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28 / 39 page  Rev. 1.21 28 of 39 April 11, 2017 32-Bit ARM® Cortex™-M0+ MCU HT32F52220/HT32F52230 Internal Clock Characteristics Table 12 High Speed Internal Clock (HSI) Characteristics TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDD Operation Range — 2.0 — 3.6 V fHSI Hsi Frequency VDD = 3.3 V @ 25°C — 8 — MHz ACCHSI Factory Calibrated Hsi Oscillator FRequency Accuracy VDD = 3.3 V, TA = 25°C -2 — 2 % VDD = 2.5 V ~ 3.6 V, TA = -40°C ~ +85°C -3 — 3 % VDD = 2.0 V ~ 3.6 V TA = -40°C ~ +85°C -4 — 4 % Duty Duty Cycle fHSI = 8 MHz 35 — 65 % IDDHSI Oscillator Supply Current fHSI = 8 MHz — 300 500 μA Power Down Current — — 0.05 μA tsuHSI Startup Time fHSI = 8 MHz -— — 10 μs Table 13 Low Speed Internal Clock (LSI) Characteristics TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fLSI Low Speed Internal Oscillator Frequency (LSI) VDD = 3.3 V, TA = -40°C ~ +85°C 21 32 43 kHz ACCLSI Lsi Frequency Accuracy After factory-trimmed, VDD = 3.3 V, TA = 25°C -10 — +10 % IDDLSI Lsi Oscillator Operating Current VDD = 3.3 V, TA = 25°C — 0.4 0.8 μA tSULSI Lsi Oscillator STartup Time VDD = 3.3 V, TA = 25°C — — 100 μs PLL Characteristics Table 14 PLL Characteristics TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fPLLIN PLL input clock — 4 — 16 MHz fCK_PLL PLL output clock — 16 — 48 MHz tLOCK PLL lock time — — 200 — μs Memory Characteristics Table 15 Flash Memory Characteristics TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit NENDU Number of guaranteed program/erase cycles before failure. (Endurance) TA = -40°C ~ +85°C 10 — — K cycles tRET Data retention time TA = -40°C ~ +85°C 10 — — Years tPROG Word programming time TA = -40°C ~ +85°C 20 — — μs tERASE Page erase time TA = -40°C ~ +85°C 2 — — ms tMERASE Mass erase time TA = -40°C ~ +85°C 10 — — ms |
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