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A29DL323 Datasheet(PDF) 46 Page - AMIC Technology |
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A29DL323 Datasheet(HTML) 46 Page - AMIC Technology |
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46 / 50 page ![]() A29DL32x Series PRELIMINARY (May, 2005, Version 0.0) 45 AMIC Technology, Corp. ERASE AND PROGRAMMING PERFORMANCE Parameter Typ. (Note 1) Max. (Note 2) Unit Comments Sector Erase Time 0.7 15 sec Chip Erase Time 27 sec Excludes 00h programming prior to erasure (Note 4) Byte Programming Time 5 150 µs Word Programming Time 7 210 µs Accelerated Word/Byte Programming Time 4 120 µs Byte Mode 9 27 sec Chip Programming Time (Note 3) Word Mode 6 18 sec Excludes system-level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0V VCC, 10,000 cycles. Additionally, programming typically assumes checkerboard pattern. 2. Under worst case conditions of 90 °C, VCC = 2.7V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 12 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 10,000 cycles. LATCH-UP CHARACTERISTICS Description Min. Max. Input Voltage with respect to VSS on all I/O pins -1.0V VCC+1.0V VCC Current -100 mA +100 mA Input voltage with respect to VSS on all pins except I/O pins (including A9, OE and RESET ) -1.0V 12.5V Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at time. PACKAGE AND PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ. Max. Unit TSOP 6 7.5 pF CIN Input Capacitance VIN=0 TF BGA 4.2 5 pF TSOP 8.5 12 pF COUT Output Capacitance VOUT=0 TF BGA 5.4 6.5 pF TSOP 7.5 9 pF CIN2 Control Pin Capacitance VIN=0 TF BGA 3.9 4.7 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25 °C, f = 1.0MHz DATA RETENTION Parameter Test Conditions Min Unit 150 °C 10 Years Minimum Pattern Data Retention Time 125 °C 20 Years |
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