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M263 Datasheet(PDF) 344 Page - Nuvoton Technology Corporation |
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M263 Datasheet(HTML) 344 Page - Nuvoton Technology Corporation |
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344 / 398 page ![]() M261/M262/M263 Mar 25, 2020 Page 344 of 398 Rev 1.02 Symbol Ratings Conditions Max Unit VEFTB [*3] [*4] Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, LQFP128, TA = +25 °C, fHCLK = 64 MHz, 4.4 kV VESD(HBM) [*5] Electrostatic discharge voltage (human body model) TA = +25 °C 2 VESD(CDM) [*6] Electrostatic discharge voltage (charge device model) TA = +25 °C 0.5 LU [*7] Static latch-up class T A +25 °C 400 mA Note: 1. Guaranteed by characterization results, not tested in production. 2. On VBAT pin, VESD(HBM) is limited to 1000V. 3. Determinded according to IEC 61000-4-4 Electrical fast transient/burst immunity test. 4. The performace cretia class is 4A. 5. Determined according to JEDEC EIA/JESD78 standard. 6. Determined according to ANSI/ESDA/JEDEC JS-001 Standard, Electrostatic Discharge Sensitivity Testing – Human Body Model (HBM) – Component Level 7. Determined according to ANSI/ESDA/JEDEC JS-002 standard for Electrostatic Discharge Sensitivity (ESD) Testing – Charged Device Model (CDM) – Component Level. Table 8.1-4 EMC Characteristics |
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