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RX113 Datasheet(PDF) 129 Page - Renesas Technology Corp

Part # RX113
Description  32 MHz maximum operating frequency Capable of 50 DMIPS when operating at 32 MHz
PDF  131 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RX113 Datasheet(HTML) 129 Page - Renesas Technology Corp

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R01DS0216EJ0120 Rev.1.20
Page 129 of 131
Sep 07, 2020
RX113 Group
REVISION HISTORY
Classifications
- Items with Technical Update document number: Changes according to the corresponding issued Technical Update
- Items without Technical Update document number: Minor changes that do not require Technical Update to be issued
REVISION HISTORY
RX113 Group Datasheet
Rev.
Date
Description
Classification
Page
Summary
1.02
Dec 01, 2014
—
First edition, issued
1.10
Mar 31, 2016
1. Overview
16 to 23
Table 1.5 to 1.7 Note 2 regarding I/O power source is AVCC0 for the ports
(P4, P9, PJ6, and P7), added
5. Electrical Characteristics
53
Table 5.1 Absolute Maximum Ratings, Analog power supply voltage added
TN-RX*-A149A/E
54
Table 5.2 Recommended Operating Conditions, VREFH0 / VREFH / AVCC0
/ VREFL added
TN-RX*-A149A/E
60
Table 5.8 DC Characteristics (6), Increment for LPT operation and Increment
for IWDT operation added
TN-RX*-A149A/E
62
Table 5.9 DC Characteristics (7) added
TN-RX*-A136A/E
62, 63
Table 5.10 DC Characteristics (8), LDV1,2 and CTSU operating current
added
TN-RX*-A149A/E
65, 66
Table 5.15 Permissible Output Currents is divided into D version and G
version
TN-RX*-A136A/E
105
Table 5.43 D/A Conversion Characteristics (1), Output voltage range added
119
Table 5.61 ROM (Flash Memory for Code Storage) Characteristics (2),
Erasure time - 256-Kbyte added
TN-RX*-A132A/E
120
Table 5.62 ROM (Flash Memory for Code Storage) Characteristics (3),
Temperature range for the programming/erasure operation changed
and Erasure time - 256-Kbyte added
TN-RX*-A132A/E
121
Table 5.64 E2 DataFlash Characteristics (2), Low speed FCLK changed
and Erasure time - 8-Kbyte added
TN-RX*-A132A/E
121
Table 5.65 E2 DataFlash Characteristics (3),
Temperature range for the programming/erasure operation changed,
Low speed FCLK changed
and Erasure time - 8-Kbyte added
TN-RX*-A132A/E
122 to 124
5.15 Usage Notes added
1.20
Sep 07, 2020
—
PH7, deleted
Changed description due to deletion of PH7
TN-RX*-A180A/E
TN-RX*-A0234A/E
1. Overview
17
Table 1.5 List of Pins and Pin Functions (100-Pin LFQFP) (2/3), changed
TN-RX*-A0234A/E
21
Table 1.6 List of Pins and Pin Functions (100-Pin TFLGA) (3/3), changed
TN-RX*-A0234A/E
23
Table 1.7 List of Pins and Pin Functions (64-Pin LFQFP) (2/2), changed
TN-RX*-A0234A/E
5. Electrical Characteristics
66
Table 5.14 DC Characteristics (12), changed
TN-RX*-A0234A/E
86
Table 5.31 Timing of On-Chip Peripheral Modules (2), changed
TN-RX*-A0234A/E
87
Table 5.32 Timing of On-Chip Peripheral Modules (3), changed
TN-RX*-A0234A/E
112
Table 5.51 Internal Voltage Boosting Method, changed
TN-RX*-A0234A/E
112
Table 5.52 Internal Voltage Boosting Method LCD Characteristics, changed
TN-RX*-A0234A/E
113
Table 5.53 Internal Voltage Boosting Method LCD Characteristics, changed
TN-RX*-A0234A/E
114
Table 5.54 Capacitor Split Method, changed
TN-RX*-A0234A/E
114
Table 5.55 Capacitor Split Method LCD Characteristics, changed
TN-RX*-A0234A/E
REVISION HISTORY



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