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LTM8045 Datasheet(PDF) 9 Page - Analog Devices |
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LTM8045 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 54 page ![]() LTM4655 9 Rev. 0 For more information www.analog.com SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS LDOIN(DC) LDO Input DC Voltage l 4.5 40 V VLDOOUT(DC) LDO Output Voltage VLDOIN = 36V, 0mA ≤ ILDOOUT ≤ 25mA VLDOIN = 4.5V, 0mA ≤ ILDOOUT ≤ 20mA l l 4.8 2.7 5.0 4.1 5.2 V V VLDOOUT(AC) Output Voltage Ripple 2 mVP-P ILDOOUT(OCL) Output Current Limit, 5V LDO LDOIN = 36V 140 mA Clock Generator ∆fOUT Clock-Generator Frequency Accuracy 2.7V ≤ LDOOUT ≤ 5.2V, 200kHz ≤ fOUT ≤ 3MHz, MOD Connected to CLKOUT2 l ±2.5 ±2.5 ±7.5 ±3 % % RCLKSET(RANGE) Frequency Setting Resistor Range RCLKSET Resistance for Which –7.5% ≤ ∆fOUT ≤ 7.5%, Over 2.7V ≤ LDOOUT ≤ 5.2V, MOD Electrically Connected to CLKOUT2 l 33.2 499 kΩ Period Variation (Frequency Spreading) LDOOUT = 5V, RCLKSET = 100kΩ, MOD Open Circuit ±10 % Duty Cycle 2.7V ≤ LDOOUT ≤ 5.2V, 200kHz ≤ fOUT ≤ 3MHz, MOD Electrically Connected to CLKOUT2 l 40 60 % θCLKOUT1/ θCLKOUT2 Phase Relationship of CLKOUT2 to CLKOUT1 2.7V ≤ LDOOUT ≤ 5.2V, 200kHz ≤ fOUT ≤ 3MHz, MOD Electrically Connected to CLKOUT2 180 Deg VOH_CLKOUTn CLKOUT n Output Voltage, Logic High CLKOUT n VOH Measured with Respect to LDOOUT, 2.7V ≤ LDOOUT ≤ 5.2V, ICLKOUTn = –100μA –0.4 V VOL_CLKOUTn CLKOUT n Output Voltage, Logic Low CLKOUT n VOL Measured with Respect to GND, 2.7V ≤ LDOOUT ≤ 5.2V, ICLKOUTn = 100μA 0.4 V Temperature Sensor ∆VTEMP Temperature Sensor Forward Voltage, VTEMP+ to VTEMP– ITEMP+ = 100µA and ITEMP– = –100μA at TA = 25°C 0.598 V TC∆V(TEMP) ∆VTEMP Temperature Coefficient –2.0 mV/°C η Ideality Factor 1.004 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified internal operating temperature range (Note 2). TA = 25°C, Test Circuit 3 and voltages referred to GND unless otherwise noted. Note 1: Stresses beyond those listing under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating conditions for extended periods may affect device reliability and lifetime. Note 2: The LTM4655 is tested under pulsed load conditions such that TJ ≈ TA. The LTM4655E is guaranteed to meet performance specifications over the 0°C to 125°C internal operating temperature range. Specifications over the full –40°C to 125°C internal operating temperature range are assured by design, characterization and correlation with statistical process controls. The LTM4655I is guaranteed to meet specifications over the full –40°C to 125°C internal operating temperature range. The LTM4655MP is tested and guaranteed over the full –55°C to 125°C operating temperature range. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal resistance and other environmental factors. Note 3: See output current derating curves for different VIN, VOUT, and TA, located in the Applications Information section. Note 4: Minimum on-time, PGOOD delay, and EXTVCCn switchover threshold are tested at wafer sort. Note 5: The two power inputs—VIN1 and VIN2—and their respective power outputs—VOUT1+ or VOUT1–, and VOUT2+ or VOUT2–, depending on operational configuration—are tested independently in production, in both positive-VOUT (noninverting step-down) and negative-VOUT– (inverting buck-boost) configurations. On occasion, a shorthand notation is used in this document that allows VINn torefer to both VIN1 and VIN2 by virtue of n being permitted to take on a value of 1 or 2. This italicized n notation and convention is extended to all such pin names. Note 6: To ensure minimum on-time criteria is met, VOUTn (0.5VDC)+ high line regulation is tested at 13.2VIN, with fSETn and CLKINn open circuit. VOUTn (–0.5VDC)– low line regulation is tested at 3.6VIN, with fSETn and CLKIN n open circuit. VOUTn (–0.5VDC)– high line regulation is tested at 28VIN, and with CLKINn driven at 200kHz—so as to ensure minimum on-time criteria is met. The LTM4655 is not recommended for applications where the minimum on-time criteria (guardband to 90ns) is continuously violated. The LTM4655 can ride through events (such as VIN surge) where the on-time criteria is transiently violated. See the Applications Information section. Note 7: See the Applications Information section for dropout criteria. Note 8: VOUTn (–24VDC)– is tested at 3.6VIN and 16VIN, with CLKINn driven with a 1.8MHz clock, ISET na to SVOUTn– = 12V, and RfSET = 57.6k. It is also tested at 12VIN, with CLKINn driven with a 1.5MHz clock, RfSETn = 57.6k, and RISETn = 480k. Note 9: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Note 10: The INTVCCn Abs Max peak output current is specified as the sum of current drawn by circuits internal to the module biased off of INTVCCn and current drawn by external circuits biased off of INTVCCn. Specified independently, for each channel. See the Applications Information section. |
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