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BLOCK DIAGRAM

BBIP

BBIN

VCCD2

GND

IFOP

IFON

GAIN[3]

CLK

DATA

EN

LO2OP

LO2ON

GAIN[2]

GAIN[1]

GAIN[0]

GAIN[4]

TXON

Amplitude

Select

Power Supply

Upconverter

Synthesizer #1

N

PFD/CP

+

+

−

Synthesizer #2

N

PFD/CP

+

+

−

Serial Interface

Synth #1

Divider

Synth #2

Divider

VCCIF

VCCUPC

LO1BPB

LO1BPA

VCCLO1

VCCD1

VCO#1

VCO2A

VCO2B

IF1

IF2

VarAtten

TRF1121

TRF1221

SLWS170A – APRIL 2005 – REVISED DECEMBER 2005

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated

circuits be handled with appropriate precautions. Failure to observe proper handling and installation

procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision

integrated circuits may be more susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

The detailed block diagram and the pin-out of the ASIC are shown in Figure 1 and Table 1.

2