XGS datasheet(46/53 Pages) ONSEMI

Part #	XGS

Description	XGS 12000, XGS 9400 and XGS 8000 Global Shutter CMOS Image Sensors

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Manufacturer	ONSEMI [ON Semiconductor]

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XGS Family

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IMAGE SENSOR CHARACTERISTICS

ELECTRO−OPTICAL SPECIFICATIONS

An overview of the XGS key electro−optical

specifications can be found in Table 29. Unless otherwise

noted, all measurements were done using the recommended

configuration and default operation mode.

SPECTRAL RESPONSE

Quantum efficiency curves are measured using

a monochromator with step size of 5 nm. The curves for

monochrome and color devices are shown in Figure 57.

Table 29. ELECTRO−OPTICAL SPECIFICATIONS

Parameter

Specification

Quantum Efficiency (Note 21)

63% (monochrome)

60% (color)

Dark Current

85 e− / s (Tj = 60°C)

DSNU

1.76 e− (Tj = 60°C, Tint = 5 ms)

PRNU

0.5%

Shutter Efficiency

1/3600

MTF (@ 530nm)

66.5% (vertical)

67.4% (horizontal)

21.Measured on devices with cover glass (typical transmittance cover glass = 91%).

Figure 57. Quantum Efficiency

300

400

500

600

700

800

900

1000

Wavelength [nm]

Mono

Red

Blue

Green1

Green2

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