7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Voltage range at terminals (2)

VIN, EN/UVLO

-0.3

25

V

SW, VOUT, VP

–0.3

30

V

BST

–0.3

SW + 6

V

ISEL, FB, ILIM, VCC, COMP

–0.3

6

V

TJ (3)

Operating junction temperature

–40

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

All voltage values are with respect to network ground terminal.

(3)

High junction temperatures degrade operating lifetime. Operating lifetime is de-rated for junction temperatures greater than 125°C

7.2 ESD Ratings

VALUE

UNIT

V(ESD) (1)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(3)

±750

(1)

Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges

in to the device.

(2)

Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows

safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary

precautions.

(3)

Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows

safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary

precautions.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

2.9

23

V

VOUT

Output voltage

4.5

25

V

L

Inductance, effective value

2.2

4.7

10

µH

CI

Input capacitance, effective value

10

µF

CO

Output capacitance, effective value

10

2000

µF

TJ

Operating junction temperature

–40

125

°C

7.4 Thermal Information

THERMAL METRIC(1)

TPS61376

UNIT

VQFN

13 PINS

RθJA

Junction-to-ambient thermal resistance

64.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

50.4

°C/W

RθJB

Junction-to-board thermal resistance

15.4

°C/W

ψJT

Junction-to-top characterization parameter

1.3

°C/W

ψJB

Junction-to-board characterization parameter

15.1

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

www.ti.com

TPS61376

SLVSGQ1A – JANUARY 2022 – REVISED SEPTEMBER 2022

Copyright © 2022 Texas Instruments Incorporated

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