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MPC8540 Datasheet(PDF) 360 Page - Freescale Semiconductor, Inc |
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MPC8540 Datasheet(HTML) 360 Page - Freescale Semiconductor, Inc |
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360 / 1302 page ![]() MPC8540 PowerQUICC III Integrated Host Processor Reference Manual, Rev. 1 9-6 Freescale Semiconductor DDR Memory Controller MECC[0:7] I/O Error checking and correcting codes. Input and output signals for the DDR controller’s bidirectional ECC bus. MECC[0:5] function in both normal and debug modes. O As normal mode outputs the ECC signals represent the state of ECC driven by the DDR controller on writes. As debug mode outputs MECC[0:5] provide source ID and data-valid information. See Section 20.4.3.2, “Debug Information on ECC Pins,” for more details. State Meaning Asserted/Negated—Represents the state of ECC being driven by the DDR controller on writes. Timing Assertion/Negation—Same timing as MDQ High-impedance—Same timing as MDQ I As inputs, the ECC signals represent the state of ECC driven by the SDRAM devices on reads. State Meaning Asserted/Negated—Represents the state of ECC being driven by the DDR SDRAMs on reads. Timing Assertion/Negation—Same timing as MDQ High-impedance—Same timing as MDQ MA[0:14] O Address bus. Memory controller outputs for the address to the DRAM. MA[0:14] carry 15 of the address bits for the DDR memory interface corresponding to the row and column address bits. MA[0] is the lsb of the address output from the memory controller. State Meaning Asserted/Negated—Represents the address driven by the DDR memory controller. Contains different portions of the address depending on the memory size and the DRAM command being issued by the memory controller. SeeTable 9-27 for a complete description of the mapping of these signals. Timing Assertion/Negation—The address is always driven when the memory controller is active. It is valid when a transaction is driven to DRAM (when MCSn is negated). High-impedance—When the memory controller is idle. MBA[0:1] O Logical bank address. Outputs that drive the logical (or internal) bank address pins of the SDRAM. Each SDRAM supports four addressable logical sub-banks. Bit zero of the memory controller’s output bank address must be connected to bit zero of the SDRAM’s input bank address. MBA[0] is asserted during the mode register set command to specify the extended mode register. State Meaning Asserted/Negated—Selects the DDR SDRAM logical (or internal) bank to be activated during the row address phase and selects the SDRAM internal bank for the read or write operation during the column address phase of the memory access. Table 9-27 describes the mapping of these signals in all cases. Timing Assertion/Negation—Same timing as MAn High-impedance—Same timing as MAn MCAS O Column address strobe. Active-low SDRAM address multiplexing signal. MCAS is asserted for read or write transactions and for mode register set, refresh, and precharge commands. State Meaning Asserted—Indicates that a valid SDRAM column address is on the address bus for read and write transactions. See Table 9-28 for more information on the states required on MCAS for various other SDRAM commands. Negated—The column address is not guaranteed to be valid. Timing Assertion/Negation—Assertion and negation timing is directed by the values described in Section 9.4.1.3, “DDR SDRAM Timing Configuration 1 (TIMING_CFG_1).” High-impedance—MCAS is always driven unless the memory controller is idle. Table 9-3. Memory Interface Signals—Detailed Signal Descriptions (continued) Signal(s) I/O Description |
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