HCS12 datasheet(90/126 Pages) NXP

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Device User Guide — 9S12KT256DGV1/D V01.09

Freescale Semiconductor

Table A-6 5V I/O Characteristics

Conditions are shown in Table A-4 unless otherwise noted

Num

Rating

Symbol

Min

Typ

Max

Unit

Input High Voltage

0.65*VDD5

VDD5 + 0.3

Input Low Voltage

VSS5 - 0.3

0.35*VDD5

Input Hysteresis

HYS

250

Input Leakage Current (pins in high impedance input

mode)

= V

DD5

or V

SS5

–2.5

2.5

µA

Output High Voltage (pins in output mode)

Partial Drive IOH = –2.0mA

Full Drive IOH = –10.0mA

VDD5 – 0.8

Output Low Voltage (pins in output mode)

Partial Drive IOL = +2.0mA

Full Drive IOL = +10.0mA

0.8

Internal Pull Up Device Current,

tested at V

Max.

IPUL

–130

µA

Internal Pull Up Device Current,

tested at V

Min.

IPUH

-10

µA

Internal Pull Down Device Current,

tested at V

Min.

IPDH

130

µA

Internal Pull Down Device Current,

tested at V

Max.

IPDL

µA

Input Capacitance

Cin

Injection current1

Single Pin limit

Total Device Limit. Sum of all injected currents

NOTES:

1. Refer to Section A.1.4 Current Injection, for more details

IICS

IICP

-2.5

-25

2.5

Port H, J, P Interrupt Input Pulse ﬁltered2

2. Parameter only applies in STOP or Pseudo STOP mode.

tpign

µs

Port H, J, P Interrupt Input Pulse passed(2)

tpval

µs

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