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HCS12 Datasheet(PDF) 98 Page - NXP Semiconductors |
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HCS12 Datasheet(HTML) 98 Page - NXP Semiconductors |
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98 / 126 page ![]() Device User Guide — 9S12KT256DGV1/D V01.09 98 Freescale Semiconductor Table A-12 3.3V ATD Operating Characteristics A.5.2 Factors influencing accuracy Three factors - source resistance, source capacitance and current injection - have an influence on the accuracy of the ATD. A.5.2.1 Source Resistance: Due to the input pin leakage current as specified in Table A-6 and Table A-7in conjunction with the source resistance there will be a voltage drop from the signal source to the ATD input. The maximum source resistance RS specifies results in an error of less than 1/2 LSB (2.5mV) at the maximum leakage current. If device or operating conditions are less than worst case or leakage-induced error is acceptable, larger values of source resistance are allowed. A.5.2.2 Source capacitance When sampling an additional internal capacitor is switched to the input. This can cause a voltage drop due to charge sharing with the external and the pin capacitance. For a maximum sampling error of the input voltage ≤ 1LSB, then the external filter capacitor, C f ≥ 1024 * (CINS- CINN). A.5.2.3 Current injection There are two cases to consider. Conditions are shown in Table A-4 unless otherwise noted; Supply Voltage 3.3V-10% <= VDDA <= 3.3V+10% Num C Rating Symbol Min Typ Max Unit 1 D Reference Potential Low High VRL VRH VSSA VDDA/2 VDDA/2 VDDA V V 2 C Differential Reference Voltage VRH-VRL 3.0 3.3 3.6 V 3 D ATD Clock Frequency fATDCLK 0.5 2.0 MHz 4 D ATD 10-Bit Conversion Period Clock Cycles1 Conv, Time at 2.0MHz ATD Clock fATDCLK Conv, Time at 4.0MHz2 ATD Clock fATDCLK NOTES: 1. The minimum time assumes a final sample period of 2 ATD clocks cycles while the maximum time assumes a final sample period of 16 ATD clocks. 2. Reduced accuracy see Table A-14 and Table A-15. NCONV10 TCONV10 TCONV10 14 7 3.5 28 14 7 Cycles µs µs 5 D ATD 8-Bit Conversion Period Clock Cycles(1) Conv, Time at 2.0MHz ATD Clock fATDCLK NCONV8 TCONV8 12 6 26 13 Cycles µs 6 D Recovery Time (VDDA=3.3 Volts) tREC 20 µs 7 P Reference Supply current (two ATD modules) IREF 0.500 mA 8 P Reference Supply current (one ATD module) IREF 0.250 mA |
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