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HCS12 Datasheet(PDF) 102 Page - NXP Semiconductors |
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HCS12 Datasheet(HTML) 102 Page - NXP Semiconductors |
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102 / 126 page  Device User Guide — 9S12KT256DGV1/D V01.09 102 Freescale Semiconductor A.6 NVM, Flash and EEPROM NOTE: Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for both Flash and EEPROM. A.6.1 NVM timing The time base for all NVM program or erase operations is derived from the oscillator. A minimum oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules do not have any means to monitor the frequency and will not prevent program or erase operation at frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at a lower frequency a full program or erase transition is not assured. The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within the limits specified as fNVMOP. The minimum program and erase times shown in Table A-16 are calculated for maximum fNVMOP and maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz. A.6.1.1 Single Word Programming The programming time for single word programming is dependant on the bus frequency as a well as on the frequency fNVMOP and can be calculated according to the following formula. A.6.1.2 Row Programming Flash programming where up to 64 words in a row can be programmed consecutively by keeping the command pipeline filled. The time to program a consecutive word can be calculated as: The time to program a whole row is: Row programming is more than 2 times faster than single word programming. A.6.1.3 Sector Erase Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes: t swpgm 9 1 f NVMOP --------------------- ⋅ 25 1 f bus ---------- ⋅ + = t bwpgm 4 1 f NVMOP --------------------- ⋅ 9 1 f bus ---------- ⋅ + = t brpgm t swpgm 63 t bwpgm ⋅ + = |
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