HCS12 datasheet(104/126 Pages) NXP

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Device User Guide — 9S12KT256DGV1/D V01.09

104

Freescale Semiconductor

A.6.2 NVM Reliability

The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process

monitors and burn-in to screen early life failures.

The failure rates for data retention and program/erase cycling are specified at the operating conditions

noted.

The program/erase cycle count on the sector is incremented every time a sector or mass erase event is

executed.

NOTE:

All values shown in Table A-17 are target values and subject to further extensive

characterization.

Table A-17 NVM Reliability Characteristics

Conditions are shown in Table A-4 unless otherwise noted

Num C

Rating

Symbol

Min

Typ

Max

Unit

Data Retention at an average junction temperature of

TJavg = 70°C

tNVMRET

Years

C Flash number of Program/Erase cycles

nFLPE

1000

10,000

Cycles

EEPROM number of Program/Erase cycles

(–40

°C

≤ T

J ≤ 0°C)

nEEPE

10,000

Cycles

EEPROM number of Program/Erase cycles

°C < T

J ≤ 140°C)

nEEPE

100,000

Cycles

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