HCS12 datasheet(91/126 Pages) NXP

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Device User Guide — 9S12KT256DGV1/D V01.09

Freescale Semiconductor

A.1.10 Supply Currents

This section describes the current consumption characteristics of the device as well as the conditions for

the measurements.

Table A-7 3.3V I/O Characteristics

Conditions are shown in Table A-4 unless otherwise noted

Num C

Rating

Symbol

Min

Typ

Max

Unit

Input High Voltage

0.65*VDD5

VDD5 + 0.3

Input Low Voltage

VSS5 - 0.3

0.35*VDD5

C Input Hysteresis

HYS

250

Input Leakage Current (pins in high impedance input

mode)

= V

DD5

or V

SS5

–1

µA

Output High Voltage (pins in output mode)

Partial Drive IOH = –0.75mA

Full Drive IOH = –4.5mA

VDD5 – 0.4

Output Low Voltage (pins in output mode)

Partial Drive IOL = +0.9mA

Full Drive IOL = +5.5mA

0.4

Internal Pull Up Device Current,

tested at V

Max.

IPUL

–60

µA

Internal Pull Up Device Current,

tested at V

Min.

IPUH

-6

µA

Internal Pull Down Device Current,

tested at V

Min.

IPDH

µA

Internal Pull Down Device Current,

tested at V

Max.

IPDL

µA

D Input Capacitance

Cin

Injection current1

Single Pin limit

Total Device Limit. Sum of all injected currents

NOTES:

1. Refer to Section A.1.4 Current Injection, for more details

IICS

IICP

-2.5

-25

2.5

Port P, J Interrupt Input Pulse ﬁltered2

2. Parameter only applies in STOP or Pseudo STOP mode.

tPULSE

µs

Port P, J Interrupt Input Pulse passed(2)

tPULSE

µs

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