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HCS12 Datasheet(PDF) 118 Page - NXP Semiconductors

Part # HCS12
Description  HCS12 Microcontrollers
PDF  126 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

HCS12 Datasheet(HTML) 118 Page - NXP Semiconductors

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Device User Guide — 9S12KT256DGV1/D V01.09
118
Freescale Semiconductor
Table A-24 Expanded Bus Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted, CLOAD = 50pF
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
P
Frequency of operation (E-clock)
fo
0
25.0
1
2
P
Cycle time
tcyc
40
2
3
D
Pulse width, E low
PWEL
17
3
4
D
Pulse width, E high1
PWEH
17
4
5
D
Address delay time
tAD
8
5
6
D
Address valid time to E rise (PWEL–tAD)
tAV
11
6
7
D
Muxed address hold time
tMAH
2
7
8
D
Address hold to data valid
tAHDS
7
8
9
D
Data hold to address
tDHA
2
9
10
D
Read data setup time
tDSR
13
10
11
D
Read data hold time
tDHR
0
11
12
D
Write data delay time
tDDW
7
12
13
D
Write data hold time
tDHW
2
13
14
D
Write data setup time(1) (PWEH–tDDW)
tDSW
10
14
15
D
Address access time(1) (tcyc–tAD–tDSR)
tACCA
19
15
16
D
E high access time(1) (PWEH–tDSR)
tACCE
4
16
17
D
Non-multiplexed address delay time
tNAD
7
17
18
D
Non-muxed address valid to E rise (PWEL–tNAD)
tNAV
10
18
19
D
Non-multiplexed address hold time
tNAH
2
19
20
D
Chip select delay time
tCSD
16
20
21
D
Chip select access time(1) (tcyc–tCSD–tDSR)
tACCS
11
21
22
D
Chip select hold time
tCSH
2
22
23
D
Chip select negated time
tCSN
8
23
24
D
Read/write delay time
tRWD
7
24
25
D
Read/write valid time to E rise (PWEL–tRWD)
tRWV
10
25
26
D
Read/write hold time
tRWH
2
26
27
D
Low strobe delay time
tLSD
7
27
28
D
Low strobe valid time to E rise (PWEL–tLSD)
tLSV
10
28
29
D
Low strobe hold time
tLSH
2
29
30
D
NOACC strobe delay time
tNOD
7
30
31
D
NOACC valid time to E rise (PWEL–tLSD)
tNOV
10
31



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