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33742 Datasheet(PDF) 19 Page - Freescale Semiconductor, Inc |
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33742 Datasheet(HTML) 19 Page - Freescale Semiconductor, Inc |
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19 / 65 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 19 33742 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS STATE MACHINE TIMING (CS, SCLK, MOSI, MISO, WDOG, INT) (CONTINUED) Delay Between SPI and CAN Normal Mode (33) Normal Mode (34) tS-CAN_N — — 10 µs Delay Between SPI and CAN Sleep Mode (33) Normal Mode (34) tS-CAN_S — — 10 µs Delay Between CS Wake-Up (CS LOW to HIGH) and Device in Normal Request Mode (VDD ON and RST HIGH) Stop Mode tW-CS 15 40 90 µs Delay Between CS Wake-Up (CS LOW to HIGH) and First Accepted SPI Command Device in Stop Mode After Wake-Up tW-SPI 90 — N/A µs Delay Between INT Pulse and First SPI Command Accepted Device in Stop Mode After Wake-Up tS-1STSPI 20 — N/A µs Delay Between Two SPI Messages Addressing the Same Register t2SPI 25 — — µs OUTPUT PIN (VDD) Reset Delay Time Measured at 50% of Reset Signal tD 4.0 — 30 µs IDD Overcurrent to Wake-Up Deglitcher Time (34) tIDD-DGLT 40 55 75 µs OUTPUT PIN (RST) Reset Duration After VDD HIGH 33742 33742S tRSTDUR tRSTDURS 12 3.0 15 3.5 18 4.0 ms INPUT PINS (L0, L1, L2, AND L3) Wake-Up Filter Time tWUF 8.0 20 38 µs Notes 33. Delay starts at falling edge of clock cycle #8 of the SPI command and start of “Turn ON” or “Turn OFF” of HS or V2. 34. Guaranteed by design; it is not production tested. Table 6. Dynamic Electrical Characteristics (continued) Characteristics noted under conditions 4.75 V ≤ V2 ≤ 5.25 V, 5.5 V ≤ VSUP ≤ 18 V, and -40°C ≤ TA ≤ 125°C. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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