TDA4VM21 datasheet(200/331 Pages) TI

200 / 331 page

The crystal must be in the fundamental mode of operation and parallel resonant. Table 6-31 summarizes the

required electrical constraints.

Table 6-31. OSC1 Crystal Electrical Characteristics

PARAMETER

MIN

TYP

MAX

UNIT

Fxtal

Crystal Parallel Resonance Frequency

19.2

MHz

Fxtal

Crystal Frequency Stability and Tolerance

Ethernet RGMII and RMII

not used

±100

ppm

Ethernet RGMII and RMII

using derived clock

±50

CL1+PCBXI

Capacitance of CL1 + CPCBXI

CL2+PCBXO

Capacitance of CL2 + CPCBXO

Crystal Load Capacitance

Cshunt

Crystal Circuit Shunt Capacitance

ESRxtal = 30 Ω

19.2 MHz, 20 MHz,

24 MHz, 25 MHz, 26 MHz,

27 MHz

ESRxtal = 40 Ω

19.2 MHz, 20 MHz,

24 MHz, 25 MHz, 26 MHz,

27 MHz

ESRxtal = 50 Ω

19.2 MHz, 20 MHz,

24 MHz, 25 MHz, 26 MHz,

27 MHz

ESRxtal = 60 Ω

19.2 MHz, 20 MHz, 24 MHz

ESRxtal = 80 Ω

19.2 MHz, 20 MHz

25 MHz

ESRxtal = 100 Ω 19.2 MHz, 20 MHz

ESRxtal

Crystal Effective Series Resistance

100

When selecting a crystal, the system design must consider the temperature and aging characteristics of a based

on the worst case environment and expected life expectancy of the system.

Table 6-32 details the switching characteristics of the oscillator and the requirements of the input clock.

Table 6-32. OSC1 Switching Characteristics – Crystal Mode

PARAMETER

MIN

TYP

MAX

UNIT

CXI

XI Capacitance

1.55

CXO

XO Capacitance

1.35

CXIXO

XI to XO Mutual Capacitance

0.9

Maximum Start-up Time

9.5(1)

(1)

TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. The

vendors are equipped to determine what load capacitors will best tune their resonator/crystal to the microcontroller device

for optimum startup and operation over temperature/voltage extremes.

TDA4VM-Q1, TDA4VM

SPRSP36K – SEPTEMBER 2021 – REVISED APRIL 2024

www.ti.com

200

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